FDPF3N50NZ Fairchild Semiconductor, FDPF3N50NZ Datasheet - Page 2

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FDPF3N50NZ

Manufacturer Part Number
FDPF3N50NZ
Description
MOSFET N-CH 500V 3A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF3N50NZ

Input Capacitance (ciss) @ Vds
280pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
2.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
9nC @ 10V
Power - Max
27W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDPF3N50NZ
Manufacturer:
Fairchi/ON
Quantity:
17 396
Part Number:
FDPF3N50NZ
Manufacturer:
FAIRCHILD
Quantity:
8 000
FDP3N50NZ / FDPF3N50NZ Rev. A
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 25mH, I
3. I
4. Pulse Test: Pulse Width  300 s, Duty cycle  2.0%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
BV
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
T
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
Symbol
DSS
J
FDPF3N50NZ
DSS
3A, di/dt  200A/s, V
FDP3N50NZ
AS
= 3A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
 BV
FDPF3N50NZ
G
FDP3N50NZ
DSS
= 25, Starting T
Device
, Starting T
Parameter
J
= 25C
T
J
C
= 25C
= 25
o
C unless otherwise noted
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
f = 1MHz
V
V
V
V
V
D
D
DS
DS
GS
DD
GS
GS
GS
GS
GS
DS
DS
GS
F
DS
= 250A, V
= 250A, Referenced to 25
/dt = 100A/s
= 500V, V
= 400V, V
= ±25V, V
= 25V, V
= 400V I
= 250V, I
= 10V, R
= 0V, I
= 0V, I
= V
= 10V, I
= 10V
= 20V, I
DS
Test Conditions
, I
2
SD
SD
Reel Size
D
D
D
D
GS
D
GEN
GS
= 3A
= 3A
= 1.5A
GS
GS
DS
= 250A
= 1.5A
= 3A
= 3A
= 0V
= 0V, T
-
-
= 0V
= 0V,T
= 0V
= 25
C
C
= 25
= 125
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
C
o
C
o
Tape Width
C
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.52
Typ.
190
210
0.5
2.5
6.2
1.4
3.1
2.1
1.9
30
10
15
26
17
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±10
280
5.0
2.5
1.4
10
45
30
12
40
60
45
1
5
9
3
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
pF
pF
pF
C
A
A
ns
ns
ns
ns
ns
A
A
V
V
V
S
o
C

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