FDPF3N50NZ Fairchild Semiconductor, FDPF3N50NZ Datasheet - Page 4

• Manufacturer Part Number: FDPF3N50NZ
• Description: MOSFET N-CH 500V 3A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: UniFET-II™r

Specifications of FDPF3N50NZ

• Input Capacitance (ciss) @ Vds: 280pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.5 Ohm @ 1.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 9nC @ 10V
• Power - Max: 27W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP3N50NZ / FDPF3N50NZ Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
0.01
1.15
1.10
1.05
1.00
0.95
0.90
0.1
20
10
vs. Case Temperature-FDPF3N50NZ
1
-75 -50
1
Operation in This Area
is Limited by R
vs. Temperature
T
V
J
DS
, Junction Temperature
, Drain-Source Voltage [V]
0.01
10
DS(on)
0.1
0
5
1
10
Figure 11. Transient Thermal Response Curve- FDPF3N50NZ
0.05
0.5
0.02
0.2
0.1
0.01
Single pulse
-5
*Notes:
1. T
2. T
3. Single Pulse
50
C
J
= 150
= 25
10
DC
100
10ms
-4
o
o
C
1ms
*Notes:
C
1. V
2. I
[
100
100
o
C
D
]
GS

= 250
s
10
= 0V
30
-3
Rectangular Pulse Duration [sec]


s
A
1000
150
(Continued)
10
-2
4
10
Figure 8. On-Resistance Variation
-1
2.6
2.4
2.0
1.6
1.2
0.8
0.4
Figure 10. Maximum Drain Current
4
3
2
1
0
25
-75 -50
*Notes:
P
1. Z
2. Duty Factor, D= t
3. T
DM
1

JM
50
JC
T
T
- T
(t) = 4.6
C
vs. Temperature
J
, Junction Temperature
, Case Temperature [
C
t
1
= P
t
2
0
o
DM
10
C/W Max.
75
* Z
1

/t
JC
2
(t)
50
100
10
2
o
C]
*Notes:
[
1. V
2. I
100
o
125
C
D
]
GS
= 1.5A
= 10V
www.fairchildsemi.com
150
150