FDMS86103L Fairchild Semiconductor, FDMS86103L Datasheet

MOSFET N-CH 100V 49A LL POWER56

FDMS86103L

Manufacturer Part Number
FDMS86103L
Description
MOSFET N-CH 100V 49A LL POWER56
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDMS86103L

Input Capacitance (ciss) @ Vds
3710pF @ 50V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Power - Max
2.5W
Mounting Type
*
Package / Case
*
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.4 mOhms
Forward Transconductance Gfs (max / Min)
59
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
12 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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FDMS86103L
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©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C
MOSFET Maximum Ratings
Thermal Characteristics
Package Marking and Ordering Information
FDMS86103L
N-Channel PowerTrench
100 V, 49 A, 8 mΩ
Features
V
V
I
E
P
T
R
R
D
J
DS
GS
AS
D
θJC
θJA
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
, T
Symbol
Device Marking
STG
FDMS86103L
DS(on)
DS(on)
= 8 mΩ at V
= 11 mΩ at V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Top
GS
GS
= 10 V, I
Power 56
FDMS86103L
= 4.5 V, I
-Continuous (Silicon limited)
-Continuous
-Pulsed
Device
D
D
= 12 A
D
= 10 A
D
T
®
A
D
= 25 °C unless otherwise noted
MOSFET
D
Parameter
Bottom
Power 56
DS(on)
Package
S
S
1
S
General Description
This
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
Pin 1
G
T
T
T
T
T
C
C
DC-DC Conversion
A
C
A
= 25 °C
= 25 °C
= 25 °C
= 25 °C
= 25 °C
N-Channel
Reel Size
13 ’’
D
D
D
D
(Note 1a)
(Note 1a)
(Note 1a)
(Note 3)
MOSFET
5
6
7
8
Tape Width
12 mm
is
-55 to +150
Ratings
produced using Fairchild
100
±20
100
312
104
2.5
1.2
49
81
12
50
®
process thant has
December 2010
4
www.fairchildsemi.com
3
2
1
3000 units
Quantity
G
S
S
S
Units
°C/W
mJ
°C
W
V
V
A

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FDMS86103L Summary of contents

Page 1

... R Thermal Resistance, Junction to Ambient θJA Package Marking and Ordering Information Device Marking Device FDMS86103L FDMS86103L ©2010 Fairchild Semiconductor Corporation FDMS86103L Rev.C ® MOSFET General Description This N-Channel = Semiconductor‘s advanced Power Trench = 10 A been especially tailored to minimize the on-state resistance and D yet maintain superior switching performance ...

Page 2

... Notes determined with the device mounted θJA the user's board design. 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. ° 3. Starting mH ©2010 Fairchild Semiconductor Corporation FDMS86103L Rev °C unless otherwise noted J Test Conditions = 250 μ 250 μA, referenced to 25 ° ...

Page 3

... JUNCTION TEMPERATURE ( , T J Figure 3. Normalized On- Resistance vs Junction Temperature 100 μ PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics ©2010 Fairchild Semiconductor Corporation FDMS86103L Rev °C unless otherwise noted 3 μ 100 125 150 100 0.01 o ...

Page 4

... THIS AREA IS LIMITED BY r DS(on) SINGLE PULSE 0 MAX RATED 125 C/W θ 0. 0.005 0.01 0 DRAIN to SOURCE VOLTAGE (V) DS Figure 11. Forward Bias Safe Operating Area ©2010 Fairchild Semiconductor Corporation FDMS86103L Rev °C unless otherwise noted J 4000 1000 100 100 100200 Figure 10 ...

Page 5

... Typical Characteristics 2 DUTY CYCLE-DESCENDING ORDER 0.5 0.2 0.1 0.05 0.1 0.02 0.01 0.01 0.001 - Figure 13. Junction-to-Ambient Transient Thermal Response Curve ©2010 Fairchild Semiconductor Corporation FDMS86103L Rev °C unless otherwise noted J SINGLE PULSE 125 C/W θ RECTANGULAR PULSE DURATION (sec NOTES: DUTY FACTOR ...

Page 6

... IDENT MAY APPEAR AS OPTIONAL (0.34) 0.71 0.44 1 (0.63) (0.30) 0.59 CHAMFER CORNER 8 AS PIN #1 IDENT MAY APPEAR AS OPTIONAL 0.10 C 0.08 C 1.05 0.95 ©2010 Fairchild Semiconductor Corporation FDMS86103L Rev.C 5.00 A PKG 6.15 4 TOP VIEW SEE 4.85 DETAIL A FRONT VIEW 3.81 0.50 0.40 (8X 0. ...

Page 7

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2010 Fairchild Semiconductor Corporation FDMS86103L Rev.C ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ RapidConfigure™ ...

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