FDB016N04AL7 Fairchild Semiconductor, FDB016N04AL7 Datasheet - Page 2

• Manufacturer Part Number: FDB016N04AL7
• Description: MOSFET N-CH 40V 160A D2PAK-7
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB016N04AL7

• Input Capacitance (ciss) @ Vds: 11600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 167nC @ 10V
• Power - Max: 283W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.16 mOhms
• Forward Transconductance Gfs (max / Min): 381 S
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 160 A
• Power Dissipation: 283 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB016N04AL7 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3mH, I
3. I
4. Pulse Test: Pulse width £ 300ms, Duty Cycle £ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
BV
DBV
I
I
V
R
g
C
C
C
Q
Q
Q
Q
t
t
t
t
ESR
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
DS(on)
iss
oss
rss
SD
g(tot)
gs
gs2
gd
rr
SD
Device Marking
Symbol
DSS
DT
£ 80A, di/dt £ 200A/ms, V
FDB016N04A
DSS
J
AS
= 30A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Equivalent Series Resistance (G-S)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate Charge Threshold to Plateau
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 25V, R
DD
£ BV
FDB016N04AL7
G
= 25W, Starting T
DSS
Device
, Starting T
Parameter
J
T
= 25°C
J
C
= 25°C
= 25
o
C unless otherwise noted
D2-PAK-7L
Package
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
GEN
F
= 250mA, V
= 250mA, Referenced to 25
/dt = 100A/ms
= 32V, V
= 32V, T
= ±20V, V
= 0V, I
= 10V, I
= 25V, V
= 32V, I
= 20V, I
= 0V, I
= V
= 10V, I
= 10V
= 4.7W, V
DS
Test Conditions
, I
SD
2
SD
D
D
Reel Size
D
D
D
C
GS
GS
330mm
GS
= 80A
= 80A
= 80A
= 80A
= 80A
DS
= 250mA
= 80A
= 150
GS
= 0V
= 0V
= 0V, T
= 0V
= 10V
o
C
C
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
24mm
Min.
1.0
40
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8715
2035
Typ.
1.25
0.03
1.16
230
129
118
381
21
14
33
68
84
28
12
17
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
11600
Max.
±100
2710
1224
246
500
167
306
1.3
3.0
1.6
52
38
76
10
800
-
-
-
-
-
-
-
-
-
-
Units
V/
mW
nC
nC
nC
nC
mA
nA
pF
pF
pF
ns
ns
ns
ns
ns
nC
W
V
V
S
A
A
V
o
C