FDB016N04AL7 Fairchild Semiconductor, FDB016N04AL7 Datasheet - Page 3

• Manufacturer Part Number: FDB016N04AL7
• Description: MOSFET N-CH 40V 160A D2PAK-7
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB016N04AL7

• Input Capacitance (ciss) @ Vds: 11600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 167nC @ 10V
• Power - Max: 283W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.16 mOhms
• Forward Transconductance Gfs (max / Min): 381 S
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 160 A
• Power Dissipation: 283 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB016N04AL7 Rev. A1
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
500
100
100
10
1.4
1.3
1.2
1.1
1.0
0.1
10
0.01
1
0.1
0
50
Drain Current and Gate Voltage
V
DS
V
DS
, Drain-Source Voltage [V]
*Notes:
100
,Drain-Source Voltage[V]
1. V
2. f = 1MHz
I
D
0.1
, Drain Current [A]
GS
150
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
= 0V
V
GS
V
GS
200
= 10V
*Notes:
= 20V
1. 250
2. T
*Notes: T
1
C
250
(
V
= 25
m
C ds = shorted
GS
s Pulse Test
=
o
10
C
C
10.0 V
300
= 25
8.0 V
7.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
3.0 V
C
C
C
oss
iss
o
rss
C
)
350
30
10
3
1000
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
100
Figure 6. Gate Charge Characteristics
300
100
10
10
10
1
8
6
4
2
0
1
0.2
1
0
*Notes:
1. V
2. 250
V
175
0.4
DS
SD
30
Variation vs. Source Current
and Temperature
m
, Body Diode Forward Voltage [V]
= 20V
o
s Pulse Test
V
C
Q
GS
g
, Total Gate Charge [nC]
,Gate-Source Voltage[V]
175
V
V
V
0.6
2
DS
DS
DS
o
60
C
= 8V
= 20V
= 32V
0.8
25
90
*Notes:
1. V
2. 250
o
C
*Notes: I
-55
1.0
GS
3
m
25
o
= 0V
s Pulse Test
C
o
C
120
D
1.2
= 80A
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150
1.4
4