FDB016N04AL7 Fairchild Semiconductor, FDB016N04AL7 Datasheet - Page 5

• Manufacturer Part Number: FDB016N04AL7
• Description: MOSFET N-CH 40V 160A D2PAK-7
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDB016N04AL7

• Input Capacitance (ciss) @ Vds: 11600pF @ 25V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.6 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 167nC @ 10V
• Power - Max: 283W
• Mounting Type: Surface Mount
• Package / Case: TO-263-7, D²Pak (6 leads + Tab)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 1.16 mOhms
• Forward Transconductance Gfs (max / Min): 381 S
• Drain-source Breakdown Voltage: 40 V
• Continuous Drain Current: 160 A
• Power Dissipation: 283 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDB016N04AL7 Rev. A1
0.001
0.01
0.1
1
10
Single pulse
-5
0.02
0.01
0.5
0.1
0.05
0.2
Figure 12. Transient Thermal Response Curve
10
-4
Rectangular Pulse Duration [sec]
10
-3
5
10
-2
10
*Notes:
1. Z
2. Duty Factor, D= t
3. T
-1
P
q
JM
JC
DM
(t) = 0.53
- T
C
= P
t
DM
1
1
o
t
C/W Max.
2
* Z
1
q
/t
JC
2
(t)
10
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