AUIRL1404ZSTRL International Rectifier, AUIRL1404ZSTRL Datasheet - Page 4

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AUIRL1404ZSTRL

Manufacturer Part Number
AUIRL1404ZSTRL
Description
MOSFET N-CH 40V 160A D2PAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of AUIRL1404ZSTRL

Input Capacitance (ciss) @ Vds
5080pF @ 25V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.1 mOhm @ 75A, 10V
Drain To Source Voltage (vdss)
40V
Current - Continuous Drain (id) @ 25° C
160A
Vgs(th) (max) @ Id
2.7V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 5V
Power - Max
200W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.1 mOhms
Drain-source Breakdown Voltage
40 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
180 A
Power Dissipation
200 W
Mounting Style
SMD/SMT
Gate Charge Qg
75 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
1000
1000
4
100
100
1.0
Fig 3. Typical Transfer Characteristics
10
10
Fig 1. Typical Output Characteristics
1
0.1
2
3
V DS , Drain-to-Source Voltage (V)
V GS , Gate-to-Source Voltage (V)
T J = 25°C
4
1
5
3.0V
6
V DS = 10V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 25°C
T J = 175°C
7
10
TOP
BOTTOM
8
9
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
100
10
Fig 4. Typical Forward Transconductance
1000
200
150
100
100
10
Fig 2. Typical Output Characteristics
50
1
0
0.1
0
vs. Drain Current
V DS , Drain-to-Source Voltage (V)
I D ,Drain-to-Source Current (A)
50
T J = 25°C
1
3.0V
100
60µs PULSE WIDTH
Tj = 175°C
T J = 175°C
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10
TOP
BOTTOM
V DS = 10V
150
VGS
10V
7.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
200
100

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