IXGF30N400 IXYS, IXGF30N400 Datasheet

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IXGF30N400

Manufacturer Part Number
IXGF30N400
Description
IGBT 4000V SINGLE ISOPLUS I4-PAK
Manufacturer
IXYS
Datasheets

Specifications of IXGF30N400

Voltage - Collector Emitter Breakdown (max)
4000V
Vce(on) (max) @ Vge, Ic
5.2V @ 15V, 90A
Current - Collector (ic) (max)
30A
Power - Max
160W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
ISOPLUS i4-PAC™
Vces, (v)
4000
Ic25, Tc=25°c, Igbt, (a)
30
Ic110, Tc=110°c, Igbt, (a)
15
Vce(sat), Max, Tj=25°c, Igbt, (v)
3.1
Tfi, Typ, Igbt, (ns)
-
Eoff, Typ, Tj=125°c, Igbt, (mj)
-
Tf, Typ, Igbt, (ns)
514
Rthjc, Max, Igbt, (k/w)
0.78
Package Style
ISOPLUS i4-Pak
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Igbt Type
-
Other names
Q5897999

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXGF30N400
Manufacturer:
ST
Quantity:
87 100
High Voltage IGBT
For Capacitor Discharge
Applications
( Electrically Isolated Tab)
Symbol
V
V
V
I
I
I
SSOA
(RBSOA)
P
T
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
V
© 2008 IXYS CORPORATION, All rights reserved
C25
C110
CM
CES
GES
J
JM
stg
L
SOLD
C
CES
GES
GEM
C
ISOL
GE(th)
CE(sat)
J
CES
= 25°C, unless otherwise specified)
Test Conditions
T
Continuous
Transient
T
T
T
V
Clamped inductive load
T
1.6 mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
50/60Hz, 1 minute
Test Conditions
I
I
V
V
V
I
I
C
C
C
C
J
C
C
C
C
GE
CE
GE
CE
= 25°C to 150°C
= 25°C
= 110°C
= 25°C, V
= 20V, T
= 25°C
= 250μA, V
= 250μA, V
= 0.8 • V
= 0V
= 0V, V
= 30A, V
= 90A
VJ
GE
GE
CES
GE
= 125°C, R
= ±20V
= 20V, 1ms
= 15V
GE
CE
= 0V
= V
GE
G
= 2Ω
Preliminary Technical Information
T
J
= 100°C
IXGF30N400
20..120 / 4.5..27
4000
@ 0.8 • V
Min.
-55 ... +150
-55 ... +150
3.0
Maximum Ratings
I
CM
Characteristic Values
= 300
2500
4000
± 30
± 20
300
260
360
160
150
Typ.
CES
30
15
5
±200
Nm/lb.in.
5.0
3.1
5.2
50
Max.
3 mA
V~
μA
nA
°C
°C
°C
°C
°C
W
V
V
V
V
A
A
A
A
V
V
V
g
V
I
V
ISOPLUS i4-Pak
1 = Gate
2 = Emitter
Features
Applications
Advantages
C25
UL recognized package
Electrically isolated tab
High peak current capability
Low saturation voltage
MOS gate turn-on
- drive simplicity
Rugged NPT structure
Molding epoxies meet UL 94 V-0
flammability classification
Capacitor discharge
Pulser circuits
High power density
Easy to mount
CES
CE(sat)
1
2
5
≤ ≤ ≤ ≤ ≤ 3.1V
= 4000V
= 30A
5 = Collector
TM
(IXGF)
ISOLATED TAB
DS99978(5/08)

Related parts for IXGF30N400

IXGF30N400 Summary of contents

Page 1

... CES CE CES 0V ±20V GES 30A 15V CE(sat 90A C © 2008 IXYS CORPORATION, All rights reserved Preliminary Technical Information IXGF30N400 Maximum Ratings 4000 ± 20 ± 360 = 2Ω 300 0.8 • V CES 160 -55 ... +150 150 -55 ... +150 300 260 20..120 / 4.5..27 2500 5 Characteristic Values Min ...

Page 2

... 146 210 514 0.15 4,931,844 5,049,961 5,237,481 6,162,665 5,017,508 5,063,307 5,381,025 6,259,123 B1 5,034,796 5,187,117 5,486,715 6,306,728 B1 IXGF30N400 ISOPLUS i4-Pak TM Max 0.78 °C/W °C/W 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2 6,583,505 6,710,463 6,771,478 B2 7,071,537 ...

Page 3

... GE 13V 2.0 11V 9V 1.8 1.6 7V 1.4 1.2 1.0 5V 0.8 0.6 3.5 4.0 4.5 5.0 5.5 6 25º 72A 36A 20 18A IXGF30N400 Fig. 2. Extended Output Characteristics @ 25º 15V GE 13V 11V Volts CE Fig. 4. Dependence of V Junction Temperature V = 15V 72A 36A 18A C -50 - ...

Page 4

... IXYS reserves the right to change limits, test conditions, and dimensions 40ºC J 25ºC 125º 10,000 1,000 100 2400 2800 3200 3600 4000 Fig. 11. Maximum Transient Thermal Impedance 0.01 Pulse Width - Seconds IXGF30N400 Fig. 8. Gate Charge 600V 30A 10mA ...

Page 5

... V = 15V 240 GE = 1250V 230 220 210 1,000 200 190 180 170 160 100 IXGF30N400 Fig. 13. Resistive Turn-on Rise Time vs. Drain Current 500 450 400 T = 125ºC J 350 300 R = 2Ω 15V GE 250 V = 1250V 25ºC 200 J 150 ...

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