BLF7G27L-150P,112 NXP Semiconductors, BLF7G27L-150P,112 Datasheet

BLF7G27L-150P,112

Manufacturer Part Number

BLF7G27L-150P,112

Description

TRANS LDMOS SOT539A

Manufacturer

NXP Semiconductors

Datasheet

1.BLF7G27L-150P118.pdf (14 pages)

Specifications of BLF7G27L-150P,112

Voltage - Rated

65V

Transistor Type

LDMOS (Dual)

Frequency

2.5GHz ~ 2.7GHz

Gain

16.5dB

Current Rating

37A

Current - Test

1.2A

Voltage - Test

28V

Power - Output

30W

Package / Case

Channel Type

Channel Mode

Enhancement

Continuous Drain Current

37A

Drain Source Voltage (max)

65V

Output Power (max)

30W(Typ)

Power Gain (typ)@vds

16.5@28VdB

Frequency (min)

2.5GHz

Frequency (max)

2.7GHz

Package Type

LDMOST

Pin Count

Forward Transconductance (typ)

0.86S

Drain Source Resistance (max)

140(Typ)@6.05Vmohm

Operating Temp Range

-65C to 225C

Drain Efficiency (typ)

26%

Mounting

Screw

Mode Of Operation

1-Carrier W-CDMA/IS-95

Number Of Elements

Vswr (max)

Screening Level

Military

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Noise Figure

Lead Free Status / Rohs Status

Compliant

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1. Product profile

1.1 General description

1.2 Features and benefits

1.3 Applications

150 W LDMOS power transistor for base station applications at frequencies from

2500 MHz to 2700 MHz.

Table 1.

Typical RF performance at T

[1]

[2]

Mode of operation

IS-95

Single carrier W-CDMA 2500 to 2700

BLF7G27L-150P;

BLF7G27LS-150P

Power LDMOS transistor

Rev. 1 — 12 November 2010

Excellent ruggedness

High efficiency

Low R

Designed for broadband operation (2500 MHz to 2700 MHz)

Lower output capacitance for improved performance in Doherty applications

Designed for low memory effects providing excellent pre-distortability

Internally matched for ease of use

Integrated ESD protection

Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

RF power amplifiers for base stations and multi carrier applications in the 2500 MHz to

2700 MHz frequency range

Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at

0.01 % probability on the CCDF. Channel bandwidth is 1.2288 MHz.

3GPP; test model 1; 64 DPCH; PAR = 7.2 dB at 0.01 % probability on CCDF. Channel bandwidth is 3.84

MHz.

Typical performance

providing excellent thermal stability

(MHz)

2500 to 2700

case

= 25

C in a common source class-AB production test circuit.

(mA) (V)

1200

(W)

L(AV)

(dB) (%) (dBc)

16.5 26

16.5 31

Product data sheet

ACPR

−47

[1]

885k

ACPR

(dBc)

−38

[2]

Related parts for BLF7G27L-150P,112

BLF7G27L-150P,112 Summary of contents

Page 1

... BLF7G27L-150P; BLF7G27LS-150P Power LDMOS transistor Rev. 1 — 12 November 2010 1. Product profile 1.1 General description 150 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Table 1. Typical RF performance at T Mode of operation IS-95 Single carrier W-CDMA 2500 to 2700 [1] Single carrier IS-95 with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9 ...

Page 2

... BLF7G27LS-150P 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...

Page 3

... η D ACPR 885k 7.1 Ruggedness in class-AB operation The BLF7G27L-150P and BLF7G27LS-150P are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P Thermal characteristics thermal resistance from junction to case Characteristics C unless otherwise specified. ...

Page 4

... 2500 MHz ( 2600 MHz ( 2700 MHz Fig 1. Single carrier IS-95 power gain as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam987 60 80 100 P (W) L Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 ...

Page 5

... 1200 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 5. Single carrier IS-95 peak-to-average power ratio as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam989 ACPR (dBc 100 P (W) L Fig 4. 001aam991 100 P (W) L Fig 6. All information provided in this document is subject to legal disclaimers. ...

Page 6

... 1200 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 7. Pulsed CW power gain as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam993 (3) (2) (1) 120 160 200 P (W) L Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 November 2010 ...

Page 7

... 1200 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 9. Single carrier W-CDMA power gain as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam995 η D (%) 80 120 P ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 10. Single carrier W-CDMA drain efficiency as a All information provided in this document is subject to legal disclaimers. Rev. 1 — ...

Page 8

... 1200 mA ( 2500 MHz ( 2600 MHz ( 2700 MHz Fig 13. Single carrier W-CDMA peak-to-average power ratio as a function of load power; typical values BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P 001aam997 ACPR 10M (dBc) −10 −20 −30 −40 −50 −60 −70 80 120 P ( 2500 MHz ...

Page 9

... Note 1. millimeter dimensions are derived from the original inch dimensions. 2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw. OUTLINE VERSION IEC SOT539A Fig 15. Package outline SOT539A BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P scale ...

Page 10

... Note 1. millimeter dimensions are derived from the original inch dimensions. Outline version IEC SOT539B Fig 16. Package outline SOT539B BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P scale ...

Page 11

... LDMOS LDMOST N-CDMA PAR RF VSWR W-CDMA 10. Revision history Table 9. Revision history Document ID BLF7G27L-150P_7G27LS-150P v.1 BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P Abbreviations Description Complementary Cumulative Distribution Function Continuous Wave Interim Standard 95 ElectroStatic Discharge Laterally Diffused Metal Oxide Semiconductor Laterally Diffused Metal Oxide Semiconductor Transistor ...

Page 12

... BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P [3] Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. ...

Page 13

... For sales office addresses, please send an email to: BLF7G27L-150P_7G27LS-150P Product data sheet BLF7G27L-150P; BLF7G27LS-150P NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 14

... NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Power LDMOS transistor All rights reserved. Date of release: 12 November 2010 Document identifier: BLF7G27L-150P_7G27LS-150P ...

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