BLF888AS,112 NXP Semiconductors, BLF888AS,112 Datasheet
BLF888AS,112
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BLF888AS,112 Summary of contents
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BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 — 1 March 2011 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The excellent ruggedness of this device makes it ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin BLF888A (SOT539A BLF888AS (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF888A BLF888AS 4. Limiting values Table 4. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol stg T j BLF888A_BLF888AS Preliminary data sheet Pinning Description ...
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... NXP Semiconductors 5. Thermal characteristics Table 5. Symbol Parameter R th(j-c) [1] R th(j-c) 6. Characteristics Table 6. ° Symbol Parameter V (BR)DSS V GS(th) I DSS I DSX I GSS R DS(on) C iss C oss C rss [ the drain current. D [2] Capacitance values without internal matching. Table 7. RF characteristics in NXP production narrowband test circuit; T specified ...
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... NXP Semiconductors Table 7. RF characteristics in NXP production narrowband test circuit; T specified. Symbol DVB-T (8k OFDM), class- L(AV η D IMD shldr PAR [1] I for total device. Dq [2] Measured [dBc] with delta marker at 4.3 MHz from center frequency. [3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9 0.01 % probability on CCDF ...
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... NXP Semiconductors 7. Application information 7.1 Narrowband RF figures 7.1.1 2-Tone (dB) 20 η 100 200 1.3 A; measured in a common source DS Dq narrowband 860 MHz test circuit. Fig 2. 2-Tone power gain and drain efficiency as function of load power; typical values BLF888A_BLF888AS Preliminary data sheet 001aan761 60 η ...
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... NXP Semiconductors 7.1.2 DVB (dB IMD shldr 100 150 200 1.3 A; measured in a common source DS Dq narrowband 860 MHz test circuit. Fig 4. DVB-T power gain and intermodulation distortion shoulder as function of load power; typical values 7.2 Broadband RF figures 7.2.1 DVB (dB IMD shldr 12 8 400 ...
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... NXP Semiconductors 7.3 Impedance information Fig 8. Table 8. Simulated Z f MHz 300 325 350 375 400 425 450 475 500 525 550 575 600 625 650 675 700 725 750 775 800 825 850 875 900 925 950 975 1000 BLF888A_BLF888AS Preliminary data sheet ...
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... NXP Semiconductors 7.4 Reliability Years (1) T (2) T (3) T (4) T (5) T (6) T (7) T (8) T (9) T (10) T (11) T Fig 9. BLF888A_BLF888AS Preliminary data sheet ( (8) (9) (10) 10 (11 TTF (0.1 % failure fraction). The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) × δ. = 100 ° 110 ° 120 ° ...
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... NXP Semiconductors 8. Test information Table 9. List of components For test circuit, see Figure 10, Figure 11 Component Description B1, B2 semi rigid coax C1 multilayer ceramic chip capacitor C2, C3, C4, C5, multilayer ceramic chip capacitor C6 C7 multilayer ceramic chip capacitor C8 multilayer ceramic chip capacitor C9 multilayer ceramic chip capacitor ...
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G1(test C36 R3 C34 L32 L31 50 Ω C32 C33 L33 B2 C31 R4 C35 C37 G2(test) See Table 9 for a list of components. Fig 10. Class-AB common source broadband amplifier; V C19 ...
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... NXP Semiconductors L32 50 mm L33 L32 See Table 9 for a list of components. Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier R5 C36 R3 C34 C32 C33 50 Ω C35 R4 C37 +V See Table 9 for a list of components. Fig 12. Component layout for class-AB common source amplifier BLF888A_BLF888AS ...
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... NXP Semiconductors 9. Package outline Flanged balanced LDMOST ceramic package; 2 mounting holes; 4 leads DIMENSIONS (millimetre dimensions are derived from the original inch dimensions UNIT 4.7 11.81 0.18 31.55 31.52 mm 4.2 11.56 30.94 30.96 0.10 0.465 0.185 0.007 1.242 1.241 inches 0.455 0.165 ...
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... NXP Semiconductors Earless flanged balanced LDMOST ceramic package; 4 leads Dimensions (1) Unit max 4.7 11.81 0.18 31.55 mm nom min 4.2 11.56 0.10 30.94 max 0.185 0.465 0.007 1.242 mm nom min 0.165 0.455 0.004 1.218 Note 1. millimeter dimensions are derived from the original inch dimensions. ...
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... NXP Semiconductors 10. Handling information CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 11. Abbreviations Table 10. Acronym CCDF DVB DVB-T LDMOS LDMOST OFDM PAR RF SMD ...
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... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the removal or ...
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... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...
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... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 3 6 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 6.1 Ruggedness in class-AB operation . . . . . . . . . 4 7 Application information 7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5 7.1.1 2-Tone 7.1.2 DVB ...