PIC18F26K80-I/SO Microchip Technology, PIC18F26K80-I/SO Datasheet - Page 149

• Manufacturer Part Number: PIC18F26K80-I/SO
• Description: MCU PIC 64KB FLASH 28SOIC
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F26K80-I/SO

• Core Size: 8-Bit
• Program Memory Size: 64KB (32K x 16)
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Core Processor: PIC
• Speed: 64MHz
• Connectivity: ECAN, I²C, LIN, SPI, UART/USART
• Number Of I /o: 24
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 3.6K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (0.300", 7.50mm Width)
• Controller Family/series: PIC18
• Ram Memory Size: 4KB
• Cpu Speed: 16MIPS
• No. Of Pwm Channels: 5
• Embedded Interface Type: I2C, SPI, USART
• Processor Series: PIC18F26K80
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 64 MHz
• Number Of Programmable I/os: 24
• Number Of Timers: 5
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

8.6
Data EEPROM memory has its own code-protect bits in
Configuration
operations are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM regardless of the state of the
code-protect Configuration bit. Refer to
“Special Features of the CPU”
information.
8.7
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during
Parameter 33).
The write initiate sequence, and the WREN bit
together, help prevent an accidental write during
brown-out, power glitch or software malfunction.
EXAMPLE 8-3:
 2011 Microchip Technology Inc.
LOOP
Operation During Code-Protect
Protection Against Spurious Write
the
CLRF
CLRF
BCF
BCF
BCF
BSF
BSF
MOVLW
MOVWF
MOVLW
MOVWF
BSF
BTFSC
BRA
INCFSZ EEADR, F
BRA
INCFSZ EEADRH, F
BRA
BCF
BSF
Power-up
Words.
EEADR
EEADRH
EECON1, CFGS
EECON1, EEPGD
INTCON, GIE
EECON1, WREN
EECON1, RD
55h
EECON2
0AAh
EECON2
EECON1, WR
EECON1, WR
$-2
LOOP
LOOP
EECON1, WREN
INTCON, GIE
DATA EEPROM REFRESH ROUTINE
External
Timer
read
period
for additional
Section 28.0
; Start at address 0
;
; Set for memory
; Set for Data EEPROM
; Disable interrupts
; Enable writes
; Loop to refresh array
; Read current address
;
; Write 55h
;
; Write 0AAh
; Set WR bit to begin write
; Wait for write to complete
; Increment address
; Not zero, do it again
; Increment the high address
; Not zero, do it again
; Disable writes
; Enable interrupts
and
(T
PWRT
write
Preliminary
,
PIC18F66K80 FAMILY
8.8
The data EEPROM is a high-endurance, byte-
addressable array that has been optimized for the
storage of frequently changing information (e.g., pro-
gram variables or other data that are updated often).
Frequently changing values will typically be updated
more often than specification D124. If this is not the
case, an array refresh must be performed. For this
reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
A simple data EEPROM refresh routine is shown in
Example
Note:
Using the Data EEPROM
8-3.
If data EEPROM is only used to store
constants and/or data that changes often,
an array refresh is likely not required. See
specification D124.
DS39977C-page 149