PIC18F26K80-I/SO Microchip Technology, PIC18F26K80-I/SO Datasheet - Page 566

• Manufacturer Part Number: PIC18F26K80-I/SO
• Description: MCU PIC 64KB FLASH 28SOIC
• Manufacturer: Microchip Technology
• Series: PIC® XLP™ 18Fr

Specifications of PIC18F26K80-I/SO

• Core Size: 8-Bit
• Program Memory Size: 64KB (32K x 16)
• Peripherals: Brown-out Detect/Reset, LVD, POR, PWM, WDT
• Core Processor: PIC
• Speed: 64MHz
• Connectivity: ECAN, I²C, LIN, SPI, UART/USART
• Number Of I /o: 24
• Program Memory Type: FLASH
• Eeprom Size: 1K x 8
• Ram Size: 3.6K x 8
• Voltage - Supply (vcc/vdd): 1.8 V ~ 5.5 V
• Data Converters: A/D 8x12b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 28-SOIC (0.300", 7.50mm Width)
• Controller Family/series: PIC18
• Ram Memory Size: 4KB
• Cpu Speed: 16MIPS
• No. Of Pwm Channels: 5
• Embedded Interface Type: I2C, SPI, USART
• Processor Series: PIC18F26K80
• Core: PIC
• Data Bus Width: 8 bit
• Data Ram Size: 1 KB
• Interface Type: I2C, SPI, USART
• Maximum Clock Frequency: 64 MHz
• Number Of Programmable I/os: 24
• Number Of Timers: 5
• Operating Supply Voltage: 1.8 V to 5.5 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

PIC18F66K80 FAMILY
TABLE 31-1:
DS39977C-page 566
DC CHARACTERISTICS
D110
D113
D120
D121
D122
D123
D124
D130
D131
D132B V
D133A T
D134
D135
D140
Note 1:
Param
No.
2:
3:
4:
† Data in “Typ” column is at 3.3V, 25°C unless otherwise stated. These parameters are for design guidance
V
I
E
V
T
T
T
E
V
T
I
T
DDP
DDP
Sym
DEW
RETD
REF
IW
RETD
WE
PP
D
DRW
P
PR
PEW
only and are not tested.
These specifications are for programming the on-chip program memory through the use of table write
instructions.
Refer to
endurance.
Required only if Single-Supply Programming is disabled.
The MPLAB ICD2 does not support variable V
placed between the ICD2 and target system when programming or debugging with the ICD2.
Internal Program Memory
Programming Specifications
Voltage on MCLR/V
Supply Current during
Programming
Data EEPROM Memory
Byte Endurance
V
Erase/Write Cycle Time
Characteristic Retention
Number of Total Erase/Write
Cycles before Refresh
Program Flash Memory
Cell Endurance
V
Voltage for Self-Timed Erase or
Write Operations
V
Self-Timed Write Cycle Time
Characteristic Retention
Supply Current during
Programming
Writes per Erase Cycle
MEMORY PROGRAMMING REQUIREMENTS
DD
DD
DD
Section 8.8 “Using the Data EEPROM”
for Read/Write
for Read
Characteristic
PP
/RE5 pin
(2)
(1)
Preliminary
Standard Operating Conditions
Operating temperature -40°C  T
V
DD
100K
Min
1.8
1.8
1M
1.8
1.8
1.8
1K
20
20
—
—
—
—
—
PP
+ 1.5
output. Circuitry to limit the ICD2 V
for a more detailed discussion on data EEPROM
1000K
Typ†
10M
10K
—
—
—
—
—
—
—
—
—
—
—
4
2
Max
-40°C  T
5.5
3.6
5.5
3.6
5.5
10
10
—
—
10
—
—
—
—
—
1
Units
Year Provided no other
Year Provided no other
E/W -40C to +125C
E/W -40°C to +125°C
E/W -40  C to +125  C
mA
mA
ms
ms
A
A
V
V
V
V
V
V
 +125°C for Extended
 +85°C for Industrial
 2011 Microchip Technology Inc.
(Note 3, Note 4)
(Note 2)
Using EECON to read/write
PIC18FXXKXX devices
Using EECON to read/write
PIC18LFXXKXX devices
specifications are violated
PIC18FXXKXX devices
PIC18LFXXKXX devices
PIC18FXXKXX devices
specifications are violated
For each physical address
PP
voltage must be
Conditions