JS28F128P30BF75A NUMONYX, JS28F128P30BF75A Datasheet - Page 29

• Manufacturer Part Number: JS28F128P30BF75A
• Description: IC FLASH 128MBIT 65NM 56TSOP
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of JS28F128P30BF75A

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 128M (8Mx16)
• Speed: 75ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 56-TFSOP (0.551", 14.00mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

P30
8.0
8.1
August 2008
Order Number: 306666-12
Program Operation
The device supports three programming methods: Word Programming (40h/10h),
Buffered Programming (E8h, D0h), and Buffered Enhanced Factory Programming (80h,
D0h). See
Section 5.0, “Bus Operations” on page 22
commands issued to the device. The following sections describe device programming in
detail.
Successful programming requires the addressed block to be unlocked. If the block is
locked down, WP# must be deasserted and the block must be unlocked before
attempting to program the block. Attempting to program a locked block causes a
program error (SR[4] and SR[1] set) and termination of the operation. See
10.0, “Security Modes” on page 37
The Product Name is segmented into multiple 8-Mbit Programming Regions. See
Section 1.4, “Memory Maps” on page 7
applications must partition the memory such that code and data are in separate
programming regions. XIP is executing code directly from flash memory. Each
Programming Region should contain only code or data but not both. The following
terms define the difference between code and data. System designs must use these
definitions when partitioning their code and data for the P30 device.
Word Programming
Word programming operations are initiated by writing the Word Program Setup
command to the device (see
followed by a second write to the device with the address and data to be programmed.
The device outputs Status Register data when read. See
Flowchart” on page
max values.
During programming, the Write State Machine (WSM) executes a sequence of
internally-timed events that program the desired data bits at the addressed location,
and verifies that the bits are sufficiently programmed. Programming the flash memory
array changes “ones” to “zeros”. Memory array bits that are zeros can be changed to
ones only by erasing the block (see
The Status Register can be examined for programming progress and errors by reading
at any address. The device remains in the Read Status Register state until another
command is written to the device.
Status Register bit SR[7] indicates the programming status while the sequence
executes. Commands that can be issued to the device during programming are
Program Suspend, Read Status Register, Read Device Identifier, Read CFI, and Read
Array (this returns unknown data).
When programming has finished, Status Register bit SR[4] (when set) indicates a
programming failure. If SR[3] is set, the WSM could not perform the word
programming operation because V
the word programming operation attempted to program a locked block, causing the
operation to abort.
• Code: Execution code ran out of the flash device on a continuous basis in the
• Data: Information periodically programmed into the flash device and read back
system.
(e.g. execution code shadowed and executed in RAM, pictures, log files, etc.).
80. V
PP
must be above V
Section 5.0, “Bus Operations” on page
PP
for details on locking and unlocking blocks.
Section 9.0, “Erase Operations” on page
was outside of its acceptable limits. If SR[1] is set,
for complete addressing. Execute in Place (XIP)
for details on the various programming
PPLK
, and within the specified V
Figure 34, “Word Program
22). This is
PPL
Section
35).
min/
Datasheet
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