RC28F256P30BFA NUMONYX, RC28F256P30BFA Datasheet - Page 42

• Manufacturer Part Number: RC28F256P30BFA
• Description: IC FLASH 256MBIT 100NS 64EZBGA
• Manufacturer: NUMONYX
• Series: Axcell™r

Specifications of RC28F256P30BFA

• Format - Memory: FLASH
• Memory Type: FLASH
• Memory Size: 256M (16Mx16)
• Speed: 100ns
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 2 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 64-EZBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 898885; 898885; RC28F256P30BF 898885

Table 16: LC and Frequency Support
Figure 14: Example Latency Count Setting using Code 3
11.2.3
Figure 15: End of Wordline Timing Diagram
Datasheet
42
A[MAX:0]
A[MAX:1]
D[15:0]
A [Max :1 ]
D Q[15 :0 ]
ADV#
C LK
CLK
CE#
Latency Count Settings
End of Word Line (EOWL) Considerations
End of Wordline (EOWL) WAIT states can result when the starting address of the burst
operation is not aligned to a 16-word boundary; that is, A[3:0] of start address does
not equal 0x0.
end of wordline WAIT state(s), which occur after the first 16-word boundary is reached.
The number of data words and the number of WAIT states is summarized in
“End of Wordline Data and WAIT state Comparison” on page
and P30-65nm devices.
A D V#
W A IT
5 (TSOP); 4 (Easy BGA)
OE#
5 (Easy BGA)
Address
Figure 15, “End of Wordline Timing Diagram” on page 42
Latency C ount
0
Code 3
1
High-Z
R103
Address
D ata
2
Frequency Support (MHz)
D ata
EOW L
≤ 40
≤ 52
3
43for both P30-130nm
D ata
t
Order Number: 320002-10
Data
Data
4
illustrates the
Table 17,
P30-65nm
Mar 2010