FSQ0465RBWDTU Fairchild Semiconductor, FSQ0465RBWDTU Datasheet - Page 19

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FSQ0465RBWDTU

Manufacturer Part Number
FSQ0465RBWDTU
Description
IC PWM/SENSEFET QRC TO-220F-6W
Manufacturer
Fairchild Semiconductor
Series
FPS™r
Datasheet

Specifications of FSQ0465RBWDTU

Output Isolation
Isolated
Frequency Range
48kHz ~ 67kHz
Voltage - Input
9 V ~ 20 V
Voltage - Output
650V
Power (watts)
70W
Operating Temperature
-25°C ~ 85°C
Package / Case
TO-220FL
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
FSQ0465RS/RB Rev. 1.0.1
© 2008 Fairchild Semiconductor Corporation
2. Transformer
3. Winding Specification
4. Electrical Characteristics
5. Core & Bobbin
!
!
Position
Bottom
Core: EER3016 (Ae=109.7mm
Bobbin: EER3016
Top
FSQ0465RS Rev.00
N
N
p
p
N
/2
/2
a
4
2
3
5
1
Inductance
Leakage
Insulation: Polyester Tape t = 0.025mm, Four Layers
Insulation: Polyester Tape t = 0.025mm, Two Layers
Insulation: Polyester Tape t = 0.025mm, Two Layers
Insulation: Polyester Tape t = 0.025mm, Two Layers
Insulation: Polyester Tape t = 0.025mm, Two Layers
Insulation: Polyester Tape t = 0.025mm, Two Layers
N
N
N
N
N
No
12V
12V
EER3016
N
p
p
5V
/2
a
/2
/2
/2
Figure 38. Transformer Schematic Diagram of FSQ0465RS
10
9
8
7
6
N
N
Pin (s→f)
N
12V
12V
5V
10 → 9
2
9 → 8
7 → 6
3 → 2
2 → 1
4 → 5
)
/2
/2
1 - 3
1 - 3
Pin
FSQ0465RS Rev.00
LVcc
(TIW 0.5φ,
(TIW 0.5φ,
(TIW 0.5φ,
2parallel)
2parallel)
2parallel)
L12V/2
L12V/2
(0.4φ)
(0.2φ)
(0.4φ)
Lp/2
Lp/2
L5V
0.5
0.5
0.5
0.15
0.4
0.4
φ
φ
φ
Wire
× 2(TIW)
× 2(TIW)
× 2(TIW)
φ
φ
19
φ
1
2
2
3
× 1
× 1
10
9
7
× 1
15µH Maximum
Specification
10
800µH ± 10%
9
7
4
Bottom of bobbin
Turns
22
32
11
5
4
5
Two-Layer Solenoid Winding
Center Solenoid Winding
Two-Layer Solenoid Winding
Center Solenoid Winding
Center Solenoid Winding
Center Solenoid Winding
Winding Method
5
6
8
9
Short all other pins
8
6
9
Remarks
66kHz, 1V
www.fairchildsemi.com
TAPE 4T
TAPE 1T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 1T

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