S1M/11T Vishay, S1M/11T Datasheet
S1M/11T
Specifications of S1M/11T
Related parts for S1M/11T
S1M/11T Summary of contents
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... AS Operating junction and storage temperature range Document Number: 88711 For technical questions within your region, please contact one of the following: Revision: 07-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Low forward voltage drop • ...
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... S1A thru S1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 1.0 A forward voltage Maximum DC reverse current at Rated DC blocking voltage Typical reverse recovery time Typical junction capacitance 4 MHz THERMAL CHARACTERISTICS (T PARAMETER (1) Typical thermal resistance Note: (1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas ...
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... PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.065 (1.65) 0.049 (1.25) 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) Document Number: 88711 For technical questions within your region, please contact one of the following: Revision: 07-Apr-08 PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com 100 10 1 1.6 2.0 ) 1000 100 10 ...
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... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...