CMPTA42E Central Semiconductor, CMPTA42E Datasheet

Bipolar Small Signal NPN Enhanced High Voltage

CMPTA42E

Manufacturer Part Number
CMPTA42E
Description
Bipolar Small Signal NPN Enhanced High Voltage
Manufacturer
Central Semiconductor
Datasheet

Specifications of CMPTA42E

Dc Collector/base Gain Hfe Min
50 at 1 mA at 10 V
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Package / Case
SOT-23
Collector- Emitter Voltage Vceo Max
350 V
Emitter- Base Voltage Vebo
6 V
Continuous Collector Current
0.45 A
Maximum Dc Collector Current
0.5 A
Power Dissipation
350 mW
Maximum Operating Frequency
75 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
MAXIMUM RATINGS: (T A =25°C)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL CHARACTERISTICS: (T A =25°C unless otherwise noted)
SYMBOL
I CBO
I CBO
I CEV
I EBO
BV CBO
BV CEO
BV EBO
V CE(SAT)
V CE(SAT)
V BE(SAT)
V BE(SAT)
h FE
h FE
h FE
h FE
h FE
h FE
f T
C ob
C ib
♦ Enhanced specification
ENHANCED SPECIFICATION
NPN SILICON TRANSISTOR
SURFACE MOUNT
TEST CONDITIONS
V CB =60V
V CB =60V, T A =125°C
V CE =60V, V EB =3.0V
V EB =3.0V
I C =10µA
I C =10mA
I E =10μA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
I C =150mA, I B =15mA
I C =500mA, I B =50mA
V CE =10V, I C =0.1mA
V CE =10V, I C =1.0mA
V CE =10V, I C =10mA
V CE =1.0V, I C =150mA
V CE =10V, I C =150mA
V CE =10V, I C =500mA
V CE =20V, I C =20mA, f=100MHz
V CB =10V, I E =0, f=1.0MHz
V BE =0.5V, I C =0, f=1.0MHz
SOT-23 CASE
CMPT2222AE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMPT2222AE
is an Enhanced version of the CMPT2222A NPN
Switching transistor in a SOT-23 surface mount
package, designed for switching applications, interface
circuit and driver circuit applications.
MARKING CODE: C1PE
FEATURED ENHANCED SPECIFICATIONS:
SYMBOL
T J , T stg
V CBO
V CEO
V EBO
Θ JA
MIN
100
100
100
100
100
300
P D
6.0
0.6
45
75
60
I C
BV
V
h
FE
CE
CBO
from 40 to 60 min. (130 TYP)
from 1.0V max to 0.5V max. (0.12V TYP)
from 75V min to 100V min. (145V TYP)
TYP
0.92
0.12
145
210
205
205
150
130
53
-65 to +150
100
600
350
357
6.0
45
MAX
0.15
0.50
300
1.2
2.0
8.0
10
10
10
10
25
w w w. c e n t r a l s e m i . c o m
R2 (1-February 2010)
UNITS
UNITS
°C/W
MHz
mW
mA
°C
nA
μA
nA
nA
pF
pF
V
V
V
V
V
V
V
V
V
V

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CMPTA42E Summary of contents

Page 1

... V CB =10V =0, f=1.0MHz =0.5V =0, f=1.0MHz ♦ Enhanced specification DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT2222AE is an Enhanced version of the CMPT2222A NPN Switching transistor in a SOT-23 surface mount package, designed for switching applications, interface circuit and driver circuit applications. MARKING CODE: C1PE FEATURED ENHANCED SPECIFICATIONS: ♦ ...

Page 2

CMPT2222AE ENHANCED SPECIFICATION SURFACE MOUNT NPN SILICON TRANSISTOR ELECTRICAL CHARACTERISTICS - Continued =25°C unless otherwise noted) SYMBOL TEST CONDITIONS =10V =1.0mA, f=1.0kHz =10V =10mA, f=1.0kHz h ...

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