NTE2406 NTE ELECTRONICS, NTE2406 Datasheet

Replacement Semiconductors SOT-23 GEN PUR AMP PKG OF 2

NTE2406

Manufacturer Part Number
NTE2406
Description
Replacement Semiconductors SOT-23 GEN PUR AMP PKG OF 2
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE2406

Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
40V
Transition Frequency Typ Ft
300MHz
Power Dissipation Pd
225mW
Dc Collector Current
600mA
Dc Current Gain Hfe
100
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
PKG/2
Absolute Maximum Ratings: (T
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Continuous Collector Current, I
Total Device Dissipation (FR–5 Board, Note 1), P
Thermal Resistance, Junction–to–Ambient (FR–5 Board, Note 1), R
Total Device Dissipation (Alumina Substrate, Note 2), P
Thermal Resistance, Junction–to–Ambient (Alumina Substrate, Note 2), R
Operating Junction Temperature Range, T
Storage Temperature Range, T
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
Electrical Characteristics: (T
OFF Characteristics
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Base Cutoff Current
Derate above +25 C
Derate above +25 C
Parameter
General Purpose Amp, Surface Mount
EBO
CBO
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
C
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= +25 C unless otherwise specified)
Silicon NPN Transistor
A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
(Compl to NTE2407)
V
V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
Symbol
= +25 C unless otherwise specified)
(BR)CBO
(BR)CEO
(BR)EBO
I
I
I
CBO
CEX
EBO
I
BL
J
NTE2406
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
I
I
I
V
V
V
V
V
C
C
E
CB
CB
CE
EB
CE
= 10 A, I
= 10mA, I
= 10 A, I
= 60V, I
= 60V, I
= 60V, V
= 3V, I
= 60V, V
D
Test Conditions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
C
E
B
E
E
= 0
EB(off)
EB(off)
D
= 0
= 0
= 0
= 0
= 0, T
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 3V
= 3V
A
= +125 C
thJA
. . . . . . . . . . . . . .
thJA
Min
75
40
6
. . . . . . . .
Typ
–55 to +150 C
–55 to +150 C
Max
0.01
10
10
10
20
1.8mW/ C
2.4mW/ C
556 C/W
417 C/W
225mW
300mW
600mA
Unit
nA
nA
nA
V
V
V
75V
40V
A
A
6V

Related parts for NTE2406

NTE2406 Summary of contents

Page 1

... Parameter OFF Characteristics Collector–Base Breakdown Voltage Collector–Emitter Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Base Cutoff Current NTE2406 Silicon NPN Transistor (Compl to NTE2407) = +25 C unless otherwise specified CEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 2

Electrical Characteristics (Cont’d): (T Parameter ON Characteristics (Note 3) DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter Saturation Voltage Small–Signal Characteristics Current Gain–Bandwidth Product Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small–Signal Current Gain Output Admittance Collector–Base Time Constant ...

Page 3

.037 (0.95) .074 (1.9) .118 (3.0) Max .007 (0.2) .098 (2.5) Max .051 (1.3) .043 (1.1) ...

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