NTE342 NTE ELECTRONICS, NTE342 Datasheet
NTE342
Manufacturer Part Number
NTE342
Description
Replacement Semiconductors RF PWR 130-175MHz 7W
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE342.pdf
(2 pages)
Specifications of NTE342
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Description:
The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF
band mobile radio applications.
Features:
D High Power Gain: G
D Ability to Withstand more than 20:1 VSWR Load when Operated at:
Application:
D 4 to 5 Watt Output Power Amplifiers Applications in VHF band
Absolute Maximum Ratings: (T
Collector-Base Voltage, V
Collector-Emitter Voltage (R
Emitter-Base Voltage, V
Collector Current, I
Collector Dissipation, P
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction-to-Ambient, R
Thermal Resistance, Junction-to-Case, R
V
T
T
A
C
CC
= +25°C
= +25°C
= 15.2V, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
O
C
= 6W, f = 175MHz
pe
EBO
CBO
≥ 10dB (V
BE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= ∞), V
Silicon NPN Transistor
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
= +25°C unless otherwise specified)
(P
RF Power Output
CC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
CEO
O
= 13.5V, P
= 6W, 175MHz)
thJC
NTE342
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
thJA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
O
= 6W, f = 175MHz)
-55° to +150°C
83°C/W
10°C/W
+150°C
12.5W
1.5W
35V
17V
4V
2A
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NTE342 Summary of contents
Page 1
... Description: The NTE342 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on VHF band mobile radio applications. Features: ≥ 10dB (V D High Power Gain Ability to Withstand more than 20:1 VSWR Load when Operated at 15.2V 6W 175MHz CC O Application Watt Output Power Amplifiers Applications in VHF band ...
Page 2
Electrical Characteristics: (T Parameter Breakdown Voltage Emitter to Base Breakdown Voltage Collector to Base Breakdown Voltage Collector to Emitter Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Collector Efficiency Note 1. Pulse Test: Pulse Width = ...