NTE68 NTE ELECTRONICS, NTE68 Datasheet

Replacement Semiconductors TO-3 HI-PWR AMP

NTE68

Manufacturer Part Number
NTE68
Description
Replacement Semiconductors TO-3 HI-PWR AMP
Manufacturer
NTE ELECTRONICS
Datasheet

Specifications of NTE68

Transistor Polarity
PNP
Collector Emitter Voltage V(br)ceo
-250V
Transition Frequency Typ Ft
4MHz
Power Dissipation Pd
250W
Dc Collector Current
20A
Dc Current Gain Hfe
150
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Description:
The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type
package designed for high power audio, disk head positioners, and other linear applications.
Features:
D High Safe Operating Area: 2A @ 80V
D High DC Current Gain: h
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
Collector–Emitter Voltage, V
Collector–Base Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Continuous Base Current, I
Total Power Dissipation (T
Operating Junction Temperature Range, T
Storage Temperature Range, T
Thermal Resistance, Junction–to–Case, R
Note 1. Matched complementary pairs are available upon request (NTE68MCP). Matched comple-
Note 2. Pulse Test: Pulse Width = 5ms, Duty Cycle
Continuous
Peak (Note 2)
Derate Above 25 C
mentary pairs have their gain specification (h
Disk Head Positioner for Linear Applications
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General Purpose High Power Audio,
Silicon Complementary Transistors
EBO
CBO
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
B
NTE388 (NPN) & NTE68 (PNP)
= +25 C), P
CEO
CEX
FE
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
stg
= 15 Min @ I
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
D
J
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
= 8A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
FE
10%.
) matched to within 10% of each other.
–65 to +200 C
–65 to +200 C
1.43W/ C
0.70 C/W
250W
250V
400V
400V
16A
30A
5V
5A

Related parts for NTE68

NTE68 Summary of contents

Page 1

... General Purpose High Power Audio, Disk Head Positioner for Linear Applications Description: The NTE388 (NPN) and NTE68 (PNP) are complementary silicon power transistors in a TO3 type package designed for high power audio, disk head positioners, and other linear applications. Features: D High Safe Operating Area 80V ...

Page 2

Electrical Characteristics: (T Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Collector Cutoff Current Emitter Cutoff Current Second Breakdown Second Breakdown Collector Current with Base Forward Bias ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Base–Emitter On Voltage Dynamic Characteristics Current Gain–Bandwidth ...

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