MMA20312BT1 Freescale Semiconductor, MMA20312BT1 Datasheet

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MMA20312BT1

Manufacturer Part Number
MMA20312BT1
Description
IC AMP HBT INGAP/GAAS 12-QFN
Manufacturer
Freescale Semiconductor
Datasheets

Specifications of MMA20312BT1

Current - Supply
70mA
Frequency
1.8GHz ~ 2.2GHz
Gain
27.2dB
Noise Figure
3.3dB
P1db
28.2dBm
Package / Case
12-VQFN Exposed Pad
Rf Type
LTE, PCS, TD-SCDMA, UMTS
Test Frequency
2.14GHz
Voltage - Supply
5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMA20312BT1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2010--2011. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
Heterojunction Bipolar Transistor
Technology (InGaP HBT)
High Efficiency/Linearity Amplifier
designed for use as a linear driver amplifier in wireless base station applications
as well as an output stage in femto cell or repeater applications. It is suitable for
applications with frequencies from 1800 to 2200 MHz such as TD--SCDMA,
PCS, UMTS and LTE. The amplifier is housed in a low--cost, surface mount
QFN plastic package.
• Typical Performance: V
Features
• Active Bias Control (On--chip)
• Frequency: 1800--2200 MHz
• P1dB: 30.5 dBm @ 2140 MHz (CW Application Circuit)
• Power Gain: 26.4 dB @ 2140 MHz (CW Application Circuit)
• OIP3: 44.5 dBm @ 2140 MHz (W--CDMA Application Circuit)
• Single 5 Volt Supply
• Low Cost QFN Surface Mount Package
• RoHS Compliant
• In Tape and Reel. T1 Suffix = 1000 Units, 12 mm Tape Width, 7 inch Reel.
Table 3. Thermal Characteristics
Table 1. Typical CW Performance
Small--Signal Gain
Input Return Loss
Output Return Loss
Power Output @1dB
Thermal Resistance, Junction to Case
1. V
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
The MMA20312B is a 2--stage high efficiency, Class AB InGaP HBT amplifier
(S21)
(S11)
(S22)
Compression
Case Temperature 86°C, V
Characteristic
Application Circuit
Select Documentation/Application Notes -- AN1955.
CC1
Frequency
1880 MHz
1920 MHz
2010 MHz
2025 MHz
2140 MHz
= V
CC2
= V
CTRL
Symbol
P1db
ORL
IRL
G
= 5 Vdc, T
p
CC
CC1
(dB)
29.0
29.0
27.4
26.8
27.0
G
= 5 Volts, I
ps
= V
--17.6
--20.3
1800
MHz
28.8
30.5
A
Characteristic
CC2
= 25°C, 50 ohm system, CW
(1)
= V
ACPR
(dBc)
--47.4
--46.7
--52.0
--50.0
--51.7
--10.9
--14.7
2140
MHz
26.4
30.5
CQ
CTRL
= 70 mA, P
= 5 Vdc
--13.7
2200
MHz
25.5
--9.7
30.5
PAE
(%)
9.1
9.0
9.3
9.5
9.4
dBm
Unit
out
dB
dB
dB
= 17 dBm
TD--SCDMA
TD--SCDMA
TD--SCDMA
TD--SCDMA
Test Signal
W--CDMA
Table 2. Maximum Ratings
Supply Voltage
Supply Current
RF Input Power
Storage Temperature Range
Junction Temperature
2. For reliable operation, the junction temperature should not
exceed 150°C.
Rating
Symbol
R
θJC
(2)
Document Number: MMA20312B
MMA20312BT1
1800- -2200 MHz, 27.2 dB
Symbol
V
T
I
P
CASE 2131- -01
T
CC
CC
stg
Value
InGaP HBT
in
J
30.5 dBm
PLASTIC
QFN 3x3
52
(3)
--65 to +150
Rev. 1.1, 3/2011
Value
550
150
14
6
MMA20312BT1
°C/W
Unit
dBm
Unit
mA
°C
°C
V
1

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MMA20312BT1 Summary of contents

Page 1

... Document Number: MMA20312B Rev. 1.1, 3/2011 MMA20312BT1 1800- -2200 MHz, 27.2 dB 30.5 dBm InGaP HBT CASE 2131- -01 QFN 3x3 PLASTIC Rating Symbol Value 550 --65 to +150 stg (2) T 150 J (3) Symbol Value R 52 θJC MMA20312BT1 Unit V mA dBm °C °C Unit °C/W 1 ...

Page 2

... Specified data is based on performance of soldered down part in W--CDMA application circuit. 2. For reliable operation, the junction temperature should not exceed 150° BA2 CC1 V B1 BIAS BIAS CIRCUIT CIRCUIT V BIAS RF in GND GND Figure 1. Functional Block Diagram MMA20312BT1 Vdc, 2140 MHz, T CC1 CC2 CTRL A Symbol G p IRL ORL P1dB OIP3 ...

Page 3

... Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used. Z1 0.250″ x 0.030″ Microstrip Z2 0.035″ x 0.030″ Microstrip Z3 0.283″ x 0.030″ Microstrip Figure 3. MMA20312BT1 Test Circuit Schematic - - TD- -SCDMA Table 7. MMA20312BT1 Test Circuit Component Designations and Values - - TD- -SCDMA Part C1 Chip Capacitors C2 1.8 pF Chip Capacitor C3 2.2 pF Chip Capacitor C4 5 ...

Page 4

... Note: Component numbers C9, C10, C11, C12, C14, and C15 are not used. Figure 4. MMA20312BT1 Test Circuit Component Layout - - TD- -SCDMA Table 7. MMA20312BT1 Test Circuit Component Designations and Values - - TD- -SCDMA Part C1 Chip Capacitors C2 1.8 pF Chip Capacitor C3 2.2 pF Chip Capacitor C4 5.6 pF Chip Capacitor C6, C7, C13 ...

Page 5

... CC1 CC2 1500 1750 2000 2250 f, FREQUENCY (MHz) Figure 7. S22 versus Frequency versus Temperature --40°C 85°C 25° CC1 CC2 CTRL 1750 2000 2250 2500 f, FREQUENCY (MHz) Figure 6. S21 versus Frequency versus Temperature = Vdc CTRL 2500 2750 MMA20312BT1 = 5 Vdc 2750 5 ...

Page 6

... ACPR --50 --55 --60 7 Figure 8. ACPR versus Collector Current versus Efficiency versus Output Power versus Temperature 1800 MMA20312BT1 CC1 CC2 CTRL f = 2017.5 MHz 25°C 85° --40°C 85°C --40°C 25° OUTPUT POWER (dBm) out Output Power versus Temperature Gain --40°C 25°C 85°C ...

Page 7

... Z1 0.218″ x 0.030″ Microstrip Z2 0.068″ x 0.030″ Microstrip Z3 0.250″ x 0.030″ Microstrip Figure 11. MMA20312BT1 Test Circuit Schematic - - W- -CDMA Table 8. MMA20312BT1 Test Circuit Component Designations and Values - - W- -CDMA Part C1, C5 Chip Capacitors C2, C3 1.8 pF Chip Capacitors C4 5.6 pF Chip Capacitor ...

Page 8

... Note: Component numbers C10, C11, C12, C14, and C15 are not used. Figure 12. MMA20312BT1 Test Circuit Component Layout - - W- -CDMA Table 8. MMA20312BT1 Test Circuit Component Designations and Values - - W- -CDMA Part C1, C5 Chip Capacitors C2, C3 1.8 pF Chip Capacitors C4 5.6 pF Chip Capacitor C6, C7, C13 ...

Page 9

... CTRL f = 2140 MHz Gain PAE OUTPUT POWER (dBm) out Figure 14. Power Gain versus Power Added Efficiency versus Output Power CC1 CC2 CTRL 2120 2140 2160 2180 f, FREQUENCY (MHz) Figure 15. P1dB versus Frequency, CW 200 180 160 140 120 100 Vdc 2200 MMA20312BT1 9 ...

Page 10

... Solder Pad with Thermal Via Structure MMA20312BT1 10 3.00 0.30 Figure 16. PCB Pad Layout for QFN 3x3 MA01 YWZ Figure 17. Product Marking 0.70 2.00 3.40 0.50 RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MMA20312BT1 11 ...

Page 12

... MMA20312BT1 12 RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MMA20312BT1 13 ...

Page 14

... Figs. 4 and 12, Test Circuit Component Layout, updated component part layout identifier to reflect package type. Changed from MMA20312B to QFN 3x3--12B 1.1 Mar. 2011 • Updated device descriptor box to reflect W--CDMA application circuit small--signal gain value MMA20312BT1 14 REVISION HISTORY Description RF Device Data ...

Page 15

... Freescale Semiconductor was negligent regarding the design or manufacture of the part. Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2010--2011. All rights reserved. MMA20312BT1 15 ...

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