LM6172IN National Semiconductor, LM6172IN Datasheet - Page 16

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LM6172IN

Manufacturer Part Number
LM6172IN
Description
IC, OP-AMP, 100MHZ, 3000V/µs, DIP-8
Manufacturer
National Semiconductor
Datasheet

Specifications of LM6172IN

Op Amp Type
Voltage Feedback
No. Of Amplifiers
2
Bandwidth
100MHz
Slew Rate
3000V/µs
Supply Voltage Range
5.5V To 36V
Amplifier Case Style
DIP
No. Of Pins
8
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

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Application Notes
POWER SUPPLY BYPASSING
Bypassing the power supply is necessary to maintain low
power supply impedance across frequency. Both positive
and negative power supplies should be bypassed individu-
ally by placing 0.01µF ceramic capacitors directly to power
supply pins and 2.2µF tantalum capacitors close to the
power supply pins.
TERMINATION
In high frequency applications, reflections occur if signals
are not properly terminated. Figure 6 shows a properly ter-
minated signal while Figure 7 shows an improperly termi-
nated signal.
FIGURE 6. Properly Terminated Signal
FIGURE 5. Power Supply Bypassing
(Continued)
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16
To minimize reflection, coaxial cable with matching charac-
teristic impedance to the signal source should be used. The
other end of the cable should be terminated with the same
value terminator or resistor. For the commonly used cables,
RG59 has 75Ω characteristic impedance, and RG58 has
50Ω characteristic impedance.
POWER DISSIPATION
The maximum power allowed to dissipate in a device is
defined as:
Where P
T
T
θ
For example, for the LM6172 in a SO-8 package, the maxi-
mum power dissipation at 25˚C ambient temperature is
780mW.
Thermal resistance, θ
die size, package size and package material. The smaller
the die size and package, the higher θ
DIP package has a lower thermal resistance (95˚C/W) than
that of 8-pin SO (160˚C/W). Therefore, for higher dissipation
capability, use an 8-pin DIP package.
The total power dissipated in a device can be calculated as:
P
connected at the output. P
device with a load connected at the output; it is not the power
dissipated by the load.
Furthermore,
P
P
For example, the total power dissipated by the LM6172 with
V
10V into 1kΩ is
P
: =
: =
: =
JA
J(max)
A
Q
Q
L
S
D
: =
: = P
:
is the ambient temperature
is the quiescent power dissipated in a device with no load
=
is the thermal resistance of a particular package
±
= supply current x total supply voltage with no load
is the maximum junction temperature
15V and both channels swinging output voltage of
FIGURE 7. Improperly Terminated Signal
2[(2.3mA)(30V)] + 2[(10mA)(15V − 10V)]
138mW + 100mW
238mW
D
output current x (voltage difference between supply
voltage and output voltage of the same supply)
Q
is the power dissipation in a device
+ P
L
P
D
= (T
JA
P
, depends on parameters such as
D
J(max)
= P
L
is the power dissipated in the
Q
− T
+ P
A
L
)/θ
JA
JA
becomes. The 8-pin
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