S29GL256P10TFI010 Spansion Inc., S29GL256P10TFI010 Datasheet - Page 73

• Manufacturer Part Number: S29GL256P10TFI010
• Description: IC, FLASH, 256MBIT, 100NS, TSOP-56
• Manufacturer: Spansion Inc.

Specifications of S29GL256P10TFI010

• Memory Type: Flash
• Memory Size: 256Mbit
• Memory Configuration: 32M X 8 / 16M X 16
• Ic Interface Type: CFI, Parallel
• Access Time: 100ns
• Supply Voltage Range: 2.7 To 3.6 V
• Memory Case Style: TSOP
• Data Bus Width: 8 bit, 16 bit
• Architecture: Uniform
• Interface Type: Page-mode
• Supply Voltage (max): 3.6 V
• Supply Voltage (min): 2.7 V
• Maximum Operating Current: 50 mA
• Mounting Style: SMD/SMT
• Operating Temperature: + 85 C
• Package / Case: TSOP-56
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

November 8, 2007 S29GL-P_00_A7
Addresses (x16)
Addresses (x16)
1Bh
1Ch
1Dh
1Eh
2Ah
2Bh
2Ch
2Dh
2Eh
3Ah
3Bh
3Ch
1Fh
20h
21h
22h
23h
24h
25h
26h
27h
28h
29h
2Fh
30h
31h
32h
33h
34h
35h
36h
37h
38h
39h
Addresses (x8)
Addresses (x8)
3Ah
3Ch
3Eh
4Ah
4Ch
4Eh
5Ah
5Ch
5Eh
6Ah
6Ch
6Eh
36h
38h
40h
42h
44h
46h
48h
50h
52h
54h
56h
58h
60h
60h
64h
66h
68h
70h
72h
74h
76h
78h
D a t a
S h e e t
001Bh
001Ah
0027h
0036h
0000h
0000h
0006h
0006h
0009h
0013h
0003h
0005h
0003h
0002h
0019h
0018h
0002h
0000h
0006h
0000h
0001h
000xh
0000h
000xh
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
0000h
00xxh
Data
Data
Table 12.7 Device Geometry Definition
Table 12.6 System Interface String
S29GL-P MirrorBit
( P r e l i m i n a r y )
V
V
V
V
Typical timeout per single byte/word write 2
Typical timeout for Min. size buffer write 2
Typical timeout per individual block erase 2
Typical timeout for full chip erase 2
Max. timeout for byte/word write 2
Max. timeout for buffer write 2
Max. timeout per individual block erase 2
Max. timeout for full chip erase 2
Device Size = 2
1B = 1 Gb, 1A= 512 Mb, 19 = 256 Mb, 18 = 128 Mb
Flash Device Interface description (refer to CFI publication 100)
Max. number of byte in multi-byte write = 2
(00h = not supported)
Number of Erase Block Regions within device (01h = uniform device, 02h = boot
device)
Erase Block Region 1 Information
(refer to the CFI specification or CFI publication 100)
00FFh, 0003h, 0000h, 0002h =1 Gb
00FFh, 0001h, 0000h, 0002h = 512 Mb
00FFh, 0000h, 0000h, 0002h = 256 Mb
007Fh, 0000h, 0000h, 0002h = 128 Mb
Erase Block Region 2 Information (refer to CFI publication 100)
Erase Block Region 3 Information (refer to CFI publication 100)
Erase Block Region 4 Information (refer to CFI publication 100)
CC
CC
PP
PP
Min. voltage (00h = no V
Max. voltage (00h = no V
Min. (write/erase) D7–D4: volt, D3–D0: 100 mV
Max. (write/erase) D7–D4: volt, D3–D0: 100 mV
®
Flash Family
N
byte
PP
PP
N
times typical
pin present)
N
pin present)
Description
Description
N
times typical (00h = not supported)
N
times typical
ms (00h = not supported)
N
N
N
times typical
N
N
µs (00h = not supported)
ms
µs
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