M25P80-VMN6P NUMONYX, M25P80-VMN6P Datasheet

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M25P80-VMN6P

Manufacturer Part Number
M25P80-VMN6P
Description
MEMORY, FLASH, SERIAL, 8MB, 8NSOIC
Manufacturer
NUMONYX
Datasheet

Specifications of M25P80-VMN6P

Memory Size
8Mbit
Clock Frequency
75MHz
Supply Voltage Range
2.7V To 3.6V
Memory Case Style
NSOIC
No. Of Pins
8
Operating Temperature Range
-40°C To +85°C
Package / Case
NSOIC
Memory Type
Flash
Memory Configuration
1M X 8
Interface Type
Serial, SPI
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
M25P80-VMN6P
Manufacturer:
ST
0
Part Number:
M25P80-VMN6P
Manufacturer:
MICRON
Quantity:
20 000
Part Number:
M25P80-VMN6P
Quantity:
30
Part Number:
M25P80-VMN6PBA
Manufacturer:
ST
Quantity:
20 000
Features
April 2010
SPI bus compatible serial interface
75 MHz Clock rate (maximum)
2.7 V to 3.6 V single supply voltage
8 Mbit of Flash memory
Page Program (up to 256 bytes) in 0.64 ms
(typical)
Sector Erase (512 Kbit) in 0.6 s (typical)
Bulk Erase (8 Mbit) in 8 s (typical)
Hardware Write protection: protected area size
defined by three non-volatile bits (BP0, BP1
and BP2)
Deep Power-down mode 1 µA (typical)
Electronic signatures
– JEDEC Standard two-byte signature
– Unique ID code (UID) +16 bytes of CFI
– RES instruction one-byte signature (13h)
More than 100 000 Program/Erase cycles per
sector
More than 20 years’ data retention
Packages
– RoHS compliant
Automotive Certified Parts Available
(2014h)
data
for backward compatibility
Numonyx
®
8 Mbit, low voltage, serial Flash memory
Forté™ Serial Flash Memory
Rev 23
208 mils width
SO8W (MW)
300 mils width
with 75 MHz SPI bus interface
 
PDIP8 (BA)
6 x 5 mm (MLP8)
VFDFPN8 (MP)
(MLP8 4 x 3 mm)
UFDFPN8 (MC)
M25P80
150 mils width
SO8 (MN)
www.numonyx.com
1/57
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Related parts for M25P80-VMN6P

M25P80-VMN6P Summary of contents

Page 1

... April 2010 ® Forté™ Serial Flash Memory 8 Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface SO8W (MW) 208 mils width (MLP8)   PDIP8 (BA) 300 mils width Rev 23 M25P80 SO8 (MN) 150 mils width VFDFPN8 (MP) UFDFPN8 (MC) (MLP8 mm) 1/57 www.numonyx.com 1 ...

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Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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SRWD bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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List of tables Table 1. Signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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List of figures Figure 1. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

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... Description The M25P80 Mbit (1 Mbit × 8) Serial Flash memory, with advanced write protection mechanisms, accessed by a high speed SPI-compatible bus. The memory can be programmed 1 to 256 bytes at a time, using the Page Program instruction. The memory is organized as 16 sectors, each containing 256 pages. Each page is 256 bytes wide ...

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... VFQFPN, SO8, and PDIP8 connections 1. There is an exposed central pad on the underside of the VFQFPN package. This is pulled, internally and must not be allowed to be connected to any other voltage or signal line on the PCB See Package mechanical section for package dimensions, and how to identify pin-1. M25P80 ...

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Signal description 2.1 Serial Data output (Q) This output signal is used to transfer data serially out of the device. Data is shifted out on the falling edge of Serial Clock (C). 2.2 Serial Data input (D) This input ...

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V supply voltage the supply voltage. CC 2.8 V ground the reference for the V SS supply voltage. CC 9/57 ...

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... Serial Data Output (Q) line at a time, the other devices are high impedance. Resistors R (represented in that the M25P80 is not selected if the Bus Master leaves the S line in the high impedance state. As the Bus Master may enter a state where all inputs/outputs are in high impedance at ...

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Example pF, that is R*C p never leaves the SPI bus in the high impedance state for a time period shorter than 5 µs. Figure 4. SPI modes supported CPOL CPHA ...

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Operating features 4.1 Page Programming To program one data byte, two instructions are required: Write Enable (WREN), which is one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This is followed by the ...

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... The environments where non-volatile memory devices are used can be very noisy. No SPI device can operate correctly in the presence of excessive noise. To help combat this, the M25P80 boasts the following data protection mechanisms: Power-On Reset and an internal timer (t inadvertent changes while the power supply is outside the operating specification. ...

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Table 2. Protected area sizes Status Register content BP2 BP1 BP0 bit bit bit The device is ready to accept a Bulk Erase instruction only if all ...

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Figure 5. Hold condition activation C HOLD (standard use) Hold Condition (non-standard use) Hold Condition AI02029D 15/57 ...

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Memory organization The memory is organized as: 1,048,576 bytes (8 bits each) 16 sectors (512 Kbits or 65,536 bytes each) 4096 pages (256 bytes each). Each page can be individually programmed (bits are programmed from 1 to 0). The ...

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Figure 6. Block diagram HOLD W Control Logic Address Register and Counter High Voltage Generator I/O Shift Register 256 Byte Data Buffer FFFFFh 00000h 000FFh 256 Bytes (Page Size) X Decoder Status Register Size of the ...

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Instructions All instructions, addresses, and data are shifted in and out of the device, most significant bit first. Serial Data Input (D) is sampled on the first rising edge of Serial Clock (C) after Chip Select (S) is driven ...

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Table 4. Instruction set Instruction Release from Deep Power- down, and Read Electronic Signature RES Release from Deep Power- down 1. The RDID instruction is available only for parts made with 110 nm Technology identified with Process letter '4'. (Details ...

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Figure 8. Write Disable (WRDI) instruction sequence 20/ Instruction D High Impedance AI03750D ...

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... Device identification (two bytes) A Unique ID code (UID) followed by 16 bytes of CFI data The manufacturer identification is assigned by JEDEC, and has the value 20h for Numonyx. The device identification is assigned by the device manufacturer, and indicates the memory type in the first byte (20h), and the memory capacity of the device in the second byte (14h). ...

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Figure 9. Read Identification (RDID) instruction sequence and data-out sequence 22/57 ...

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Read Status Register (RDSR) The Read Status Register (RDSR) instruction allows the Status Register to be read. The Status Register may be read at any time, even while a Program, Erase or Write Status Register cycle is in progress. ...

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Figure 10. Read Status Register (RDSR) instruction sequence and data-out sequence High Impedance Q 24/ Instruction Status Register Out 7 6 ...

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Write Status Register (WRSR) The Write Status Register (WRSR) instruction allows new values to be written to the Status Register. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable ...

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Table 7. Protection modes W SRWD Mode signal bit Software Protected (SPM Hardware 0 1 Protected (HPM defined by the values in the Block Protect (BP2, BP1, BP0) bits of the Status ...

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Read Data Bytes (READ) The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes (READ) instruction is followed by a 3-byte address (A23-A0), each bit being latched-in during the rising ...

Page 28

Read Data Bytes at Higher Speed (FAST_READ) The device is first selected by driving Chip Select (S) Low. The instruction code for the Read Data Bytes at Higher Speed (FAST_READ) instruction is followed by a 3-byte address (A23- A0) ...

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Page Program (PP) The Page Program (PP) instruction allows bytes to be programmed in the memory (changing bits from 1 to 0). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the ...

Page 30

Figure 14. Page Program (PP) instruction sequence Data Byte MSB 1. Address bits A23 to A20 are Don’t Care. 30/ ...

Page 31

Sector Erase (SE) The Sector Erase (SE) instruction sets to 1 (FFh) all bits inside the chosen sector. Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction ...

Page 32

Bulk Erase (BE) The Bulk Erase (BE) instruction sets all bits to 1 (FFh). Before it can be accepted, a Write Enable (WREN) instruction must previously have been executed. After the Write Enable (WREN) instruction has been decoded, the ...

Page 33

Deep Power-down (DP) Executing the Deep Power-down (DP) instruction is the only way to put the device in the lowest consumption mode (the Deep Power-down mode). It can also be used as an extra software protection mechanism, while the ...

Page 34

... Executing this instruction takes the device out of the Deep Power-down mode. The instruction can also be used to read, on Serial Data Output (Q), the 8-bit Electronic Signature, whose value for the M25P80 is 13h. Please note that this is not the same as, or even a subset of, the JEDEC 16-bit Electronic Signature that is read by the Read Identifier (RDID) instruction ...

Page 35

... Figure 18. Release from Deep Power-down and Read Electronic Signature (RES) instruction sequence and data-out sequence Instruction D High Impedance Q 1. The value of the 8-bit Electronic Signature for the M25P80 is 13h. Figure 19. Release from Deep Power-down (RES) instruction sequence Instruction D High Impedance Dummy Bytes ...

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Power-up and Power-down At Power-up and Power-down, the device must not be selected (that is Chip Select (S) must follow the voltage applied (min) at Power-up, and then for a further delay ...

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Figure 20. Power-up timing (max) Program, Erase and Write commands are Rejected by the device Chip selection Not Allowed V CC (min) Reset State of the device V WI Table 8. Power-up timing and V Symbol ...

Page 38

... CC V Electrostatic discharge voltage (Human Body model) ESD 1. Compliant with JEDEC Std J-STD-020C (for small body, Sn- assembly), the Numonyx RoHS compliant 7191395 specification, and the European directive on Restrictions on Hazardous Substances (RoHS) 2002/95/EU. 2. JEDEC Std JESD22-A114A (C1=100 pF, R1=1500 Ω, R2=500 Ω) 38/57 ...

Page 39

DC and AC parameters This section summarizes the operating and measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC Characteristic tables that follow are derived from tests performed under the ...

Page 40

Table 14. DC characteristics Symbol Parameter I Input leakage current LI I Output leakage current LO I Standby current CC1 I Deep Power-down current CC2 I Operating current (READ) CC3 I Operating current (PP) CC4 I Operating current (WRSR) CC5 ...

Page 41

Table 15. AC characteristics (75 MHz operation) 75 MHz available only for products made in 110 nm technology, Test conditions specified in Symbol Alt. Clock frequency for the following instructions FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI, ...

Page 42

Table 15. AC characteristics (75 MHz operation) (continued) 75 MHz available only for products made in 110 nm technology, Test conditions specified in Symbol Alt. t Write Status Register cycle time W Page Program cycle time (256 byte) Page Program ...

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Table 16. AC characteristics (25 MHz operation) Test conditions specified in Symbol Alt. Clock frequency for the following instructions FAST_READ, PP, SE, BE, DP, RES, WREN WRDI, RDSR, WRSR f Clock frequency for READ instructions R ...

Page 44

Figure 22. Serial input timing S tCHSL C tDVCH D High Impedance Q Figure 23. Write Protect setup and hold timing during WRSR when SRWD = 1 W tWHSL High Impedance Q 44/57 tSLCH tCHSH tCHDX tCLCH ...

Page 45

Figure 24. Hold timing HOLD Figure 25. Output timing S C tCLQV tCLQX tCLQX Q ADDR. D LSB IN tHLCH tCHHL tCHHH tHLQZ tHHQX tCH tCLQV tHHCH AI02032 tCL tSHQZ LSB OUT tQLQH tQHQL AI01449e 45/57 ...

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Package mechanical Figure 26. VFQFPN8 (MLP8) 8-lead Very thin Fine Pitch Quad Flat Package No lead, 6 × 5 mm, package outline Drawing is not to scale. 2. The circle in the top ...

Page 47

Figure 27. SO8 wide – 8 lead Plastic Small Outline, 208 mils body width, package outline Drawing is not to scale. 2. The ‘1’ that appears in the top view of the package shows ...

Page 48

Figure 28. SO8N – 8 lead Plastic Small Outline, 150 mils body width, package outline A2 1. Package is not to scale. Table 19. SO8N – 8 lead Plastic Small Outline, 150 mils body width, package mechanical data Symbol Typ ...

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Figure 29. PDIP8 – 8 lead Plastic Small Outline, 300 mils body width, package outline Package is not to scale. Table 20. PDIP8 – 8 lead Plastic Small Outline, 300 mils body width, package ...

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Figure 30. UFDFPN (MLP8) 8-lead ultra thin fine pitch dual flat package no lead, 4X3 mm package mechanical data 1. Drawing is not to scale. 50/57 ...

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Table 21. UFDFPN (MLP8) 8-lead ultra thin fine pitch dual flat package no lead, 4X3 mm package mechanical data Databook (mm) Symbol Typ Min A 0.55 0.45 A1 0.02 0.00 A3 — 0.127 θ — D2 0.80 0.70 E2 0.20 ...

Page 52

... QNEE9801. Please ask your Numonyx sales office for a copy. The category of second Level Interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. 52/57 Example: M25P80 – ...

Page 53

... Available only for Automotive product. Note: Numonyx strongly recommends the use of the Automotive Grade devices (Auto Grade 6 and automotive envirnoment. The high reliability certified flow (HRCF) is described in the quality note QNEE9801. Please ask your Numonyx sales office for a copy. M25P80 – (2) 6 ...

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Revision history Table 24. Document revision history Date Revision 24-Apr-2002 1.0 27-Sep-2002 1.1 13-Dec-2002 1.2 24-Oct-2003 2.0 24-Nov-2003 2.1 21-Apr-2004 3.0 07-May-2004 4.0 18-May-2004 5.0 05-Aug-2004 6.0 01-Aug-2005 7.0 20-Oct-2005 8.0 13-Apr-2006 9 20-Jul-2006 10 54/57 Changes Document released ...

Page 55

... Table 15: AC characteristics (40 MHz operation, Grade 6) removed. Modified the maximum value for f (75 MHz 10-Dec-2007 16 Applied Numonyx branding. Added a reference to customer’s ability to request dedicated part number in Section 6.3: Read Identification (RDID) on page Moved specifications in “max” column to “min” column and changed the “ ...

Page 56

Table 24. Document revision history Date Revision 19-Feb-2009 19 3-August- 20 2009 2-Feb-2010 21 23-Feb-2010 22 14-April- 23 2010 56/57 Changes Made the followng changes: added a bullet to cover page, stating "Automotive Certified Parts Available" Revised part numbering, including ...

Page 57

... NUMONYX PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Numonyx products are not intended for use in medical, life saving, life sustaining, critical control or safety systems nuclear facility Numonyx may make changes to specifications and product descriptions at any time, without notice. ...

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