AM29F016D-90EF Spansion Inc., AM29F016D-90EF Datasheet
AM29F016D-90EF
Specifications of AM29F016D-90EF
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AM29F016D-90EF Summary of contents
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... For More Information Please contact your local sales office for additional information about Spansion memory solutions. Publication Number 21444 Revision E Amendment 9 Am29F016D Cover Sheet Issue Date November 16, 2009 ...
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... This page left intentionally blank Am29F016D 21444_E9 November 16, 2009 ...
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... DATA SHEET Am29F016D 16 Megabit ( 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS ■ 5.0 V ± 10%, single power supply operation — Minimizes system level power requirements ■ Manufactured on 0.23 µm process technology — Compatible with 0.5 µm Am29F016 and 0.32 µm Am29F016B devices ■ ...
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... GENERAL DESCRIPTION The Am29F016D Mbit, 5.0 volt-only Flash mem- ory organized as 2,097,152 bytes. The 8 bits of data appear on DQ0–DQ7. The Am29F016D is offered in 48-pin TSOP, 40-pin TSOP, and 44-pin SO packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21551 ...
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... Standby Mode .......................................................................... 9 RESET#: Hardware Reset Pin ................................................. 9 Output Disable Mode................................................................ 9 Table 2. Sector Address Table........................................................ 10 Autoselect Mode..................................................................... 11 Table 3. Am29F016D Autoselect Codes (High Voltage Method).... 11 Sector Group Protection/Unprotection.................................... 11 Table 4. Sector Group Addresses................................................... 11 Temporary Sector Group Unprotect ....................................... 11 Figure 1. Temporary Sector Group Unprotect Operation............... 12 Hardware Data Protection ...................................................... 12 Low V Write Inhibit ...
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... State WE# Control Command Register CE# OE# V Detector CC A0–A20 Sector Switches Erase Voltage Generator PGM Voltage Generator Chip Enable Output Enable Logic Y-Decoder STB Timer X-Decoder Am29F016D Am29F016D -70 - DQ0 DQ7 – Input/Output Buffers Data STB Latch Y-Gating Cell Matrix 21444E9 November 16, 2009 ...
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... A19 3 A18 4 A17 5 A16 6 A15 7 A14 8 A13 9 A12 10 CE RESET# 14 A11 15 A10 November 16, 2009 21444E9 40-Pin Standard TSOP 48-Pin Standard TSOP Am29F016D 40 A20 WE# 37 OE# 36 RY/BY# 35 DQ7 34 DQ6 33 DQ5 32 DQ4 DQ3 27 DQ2 26 DQ1 25 DQ0 A20 WE# 43 OE# 42 RY/BY# 41 DQ7 40 DQ6 39 DQ5 ...
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... V =+5.0 V single power supply CC (see Product Selector Guide for device speed ratings and voltage supply tolerances Device Ground Pin Not Connected Internally LOGIC SYMBOL 21 Am29F016D CE# 42 A12 41 A13 40 A14 39 A15 38 A16 37 A17 36 A18 35 A19 A20 WE# 29 OE# 28 RY/BY# 27 DQ7 26 DQ6 25 DQ5 ...
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... Thin Small Outline Package (TSOP) Standard Pinout (TS 048) = 44-Pin Small Outline Package (SO 044) Valid Combinations list configurations planned to be sup- ported in volume for this device. Consult the local AMD sales office to confirm availability of specific valid combinations and to check on newly released combinations. Am29F016D Valid Combinations 7 ...
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... The command register it- self does not occupy any addressable memor y location. The register is composed of latches that store the commands, along with the address and data infor- mation needed to execute the command. The contents Table 1. Am29F016D Device Bus Operations Operation Read Write CMOS Standby ...
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... Refer to the AC Characteristics tables for RESET# pa- rameters and timing diagram. represents the CC3 Output Disable Mode When the OE# input disabled. The output pins are placed in the high imped- ance state Am29F016D , the device enters IL SS (during Embedded Algorithms). The (not during Embedded Algo- READY after the RH . ...
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... A18 A17 A16 Am29F016D Address Range 000000h-00FFFFh 010000h-01FFFFh 020000h-02FFFFh 030000h-03FFFFh 040000h-04FFFFh 050000h-05FFFFh 060000h-06FFFFh 070000h-07FFFFh 080000h-08FFFFh 090000h-09FFFFh 0A0000h-0AFFFFh 0B0000h-0BFFFFh 0C0000h-0CFFFFh 0D0000h-0DFFFFh 0E0000h-0EFFFFh 0F0000h-0FFFFFh 100000h-10FFFFh 110000h-11FFFFh 120000h-12FFFFh 130000h-13FFFFh 140000h-14FFFFh 150000h-15FFFFh 160000h-16FFFFh 170000h-17FFFFh 180000h-18FFFFh 190000h-19FFFFh 1A0000h-1AFFFFh 1B0000h-1BFFFFh 1C0000h-1CFFFFh 1D0000h-1DFFFFh 1E0000h-1EFFFFh 1F0000h-1FFFFFh 21444E9 November 16, 2009 ...
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... When using programming equipment, the autoselect mode requires V (11 12 address pin ID A9. Address pins A6, A1, and A0 must be as shown in Autoselect Codes (High Voltage Method) table. In addi- tion, when verifying sector protection, the sector Table 3. Am29F016D Autoselect Codes (High Voltage Method) Description CE# OE# WE# A20-A18 A17-A10 Manufacturer ID ...
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... Power-Up Write Inhibit If WE and OE device does not accept commands on the rising edge of WE#. The internal state machine is automatically reset to reading array data on power-up. Am29F016D power-up and CC , the device does not ac- LKO The system must provide the is greater than V ...
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... N Max. timeout for byte/word write 2 N Max. timeout for buffer write 2 times typical Max. timeout per individual block erase 2 N Max. timeout for full chip erase 2 times typical (00h = not supported) Am29F016D Description Description N µs N µs (00h = not supported (00h = not supported) ...
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... Simultaneous Operation Not Supported Supported Burst Mode Type Not Supported Supported Page Mode Type Not Supported Word Page Word Page ACC supply minimum ACC supply maximum Top/bottom boot sector flag 2 = bottom top. If address 2Ch = 01h, ignore this field Am29F016D N 21444E9 November 16, 2009 ...
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... When the Embedded Program algorithm is complete, the device then returns to reading array data and ad- dresses are no longer latched. The system can determine the status of the program operation by using DQ7, DQ6, or RY/BY#. See “Write Operation Status” for information on these status bits. Am29F016D on address bit A9 ...
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... The system is not required to provide any con- trols or timings during these operations. The Command Definitions table shows the address and data require- ments for the chip erase command sequence. Am29F016D START Write Program Command Sequence Data Poll ...
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... Reading at any address within erase-suspended sec- tors produces status data on DQ7–DQ0. The system can use DQ7, or DQ6 and DQ2 together, to determine if a sector is actively erasing or is erase-suspended. See “Write Operation Status” status bits. Am29F016D for informa- for information on these 17 ...
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... See the appropriate Command Definitions table for erase command sequence. 2. See “DQ3: Sector Erase Timer” for more information. Figure 3. Erase Operation for more Write Erase Command Sequence Data Poll from System No Data = FFh? Erasure Completed Am29F016D START Embedded Erase algorithm in progress Yes 21444E9 November 16, 2009 ...
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... Command Definitions Table 9. Am29F016D Command Definitions Command Sequence (Note 1) Read (Note 5) 1 Reset (Note Manufacturer ID Autoselect Device ID 4 (Note 7) Sector Group Protect 4 Verify (Note 8) CFI Query (Note 9) 1 Program 4 Unlock Bypass 3 Unlock Bypass Program (Note 10) 2 Unlock Bypass Reset (Note 11) ...
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... During chip erase, a valid address is any non-protected sector address. 2. DQ7 should be rechecked even if DQ5 = “1” because DQ7 may change simultaneously with DQ5. Figure 4. Data# Polling Algorithm Am29F016D Yes No Yes Yes No ...
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... DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation still toggling, the device did not complete the operation successfully, and Am29F016D 5 for the toggle bit II” compare out- “ ...
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... Operation Not Complete, Write Reset Command Notes: 1. Read toggle bit twice to determine whether or not it is toggling. See text. 2. Recheck toggle bit because it may stop toggling as DQ5 changes to “1”. See text. Figure 5. Toggle Bit Algorithm Am29F016D (Note No Yes Yes (Notes Yes ...
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... Exceeded Timing Limits” November 16, 2009 21444E9 Table 10. Write Operation Status DQ7 DQ5 (Note 1) DQ6 (Note 2) DQ7# Toggle 0 0 Toggle toggle 0 Data Data Data DQ7# Toggle 0 for more information. Am29F016D DQ2 DQ3 (Note 1) RY/BY# N/A No toggle 0 1 Toggle 0 N/A Toggle 1 Data Data 1 N/A N ...
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... A9, OE#, RESET# (Note –2 12.5 V All other pins (Note 1 –2 7.0 V Output Short Circuit Current (Note 200 0.5 V. During + 2.0 CC +0.8 V –0.5 V –2.0 V Figure 6. Maximum Negative +0.5 V 2.0 V Figure 7. Maximum Positive Am29F016D Overshoot Waveform Overshoot Waveform 21444E9 November 16, 2009 ...
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... V Max, CE ± 0.5 V RESET Max ± 0.5 V RESET 5 mA Min –2.5 mA Min –100 μ Min Am29F016D Min Typ Max Unit ±1.0 µA 50 µA ±1.0 µ 0.4 1.0 mA 0.4 1.0 mA –0.5 0 11.5 12.5 V 0.45 V 2.4 V 3.2 4.2 V Min Typ ...
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... Input Rise and Fall Times Input Pulse Levels Input timing measurement reference levels Output timing measurement reference levels INPUTS Steady Changing from Changing from Does Not Apply Center Line is High Impedance State (High Z) Am29F016D All speed options Unit 1 TTL gate L 100 0.45–2.4 V ...
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... WE# Outputs RESET# RY/BY November 16, 2009 21444E9 Test Setup Read Toggle and Data# Polling t RC Addresses Stable t ACC OEH t CE HIGH Z Figure 9. Read Operation Timings Am29F016D Speed Options -70 -90 Unit Min Max Max Max 40 40 Min 0 0 Min 10 10 Max 20 20 ...
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... RY/BY# CE#, OE# RESET# RY/BY# CE#, OE# RESET Test Setup Max Max Min Min Min Ready Reset Timings NOT during Embedded Algorithms Reset Timings during Embedded Algorithms t Ready t RP Figure 10. RESET# Timings Am29F016D All Speed Options Unit 20 µs 500 ns 500 21444E9 November 16, 2009 ...
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... WHWH2 t V Set Up Time (Note 1) VCS CC t WE# to RY/BY# Valid BUSY Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information. November 16, 2009 21444E9 Parameter Description Am29F016D Speed Options -70 -90 Unit Min Min 0 ns Min Min ...
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... WC Addresses 555h CE# OE# WE Data RY/BY# t VCS V CC Note program address program data WPH A0h t BUSY is the true data at the program address. OUT Figure 11. Program Operation Timings Am29F016D Read Status Data (last two cycles WHWH1 Status D OUT t RB 21444E9 November 16, 2009 ...
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... AC CHARACTERISTICS t WC Addresses 2AAh CE Data RY/BY# t VCS V CC Note Sector Address Valid Address for reading status data. Figure 12. Chip/Sector Erase Operation Timings November 16, 2009 21444E9 555h for chip erase WPH 55h 30h 10 for Chip Erase t BUSY Am29F016D WHWH2 In Complete Progress ...
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... Figure 14. Toggle Bit Timings (During Embedded Algorithms Complement Complement Status Data Status Data Valid Status Valid Status (first read) (second read) Am29F016D VA High Z Valid Data True High Z True Valid Data VA VA Valid Status Valid Data (stops toggling) 21444E9 November 16, 2009 ...
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... Figure 16. Temporary Sector Group Unprotect Timings November 16, 2009 21444E9 Enter Erase Suspend Program Erase Erase Suspend Suspend Read Program Figure 15. DQ2 vs. DQ6 Min Min Program or Erase Command Sequence t RSP Am29F016D Erase Resume Erase Erase Complete Read All Speed Options 500 VIDR Unit ns µs 33 ...
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... Byte Programming Operation (Note 2) WHWH1 WHWH1 t t Sector Erase Operation (Note 2) WHWH2 WHWH2 Notes: 1. Not 100% tested. 2. See the “Erase And Programming Performance” section for more information Parameter Description Am29F016D Speed Options -70 -90 Unit Min Min 0 ns Min Min ...
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... Figure 17. Alternate CE# Controlled Write Operation Timings November 16, 2009 21444E9 for program SA for sector erase 555 for chip erase Data# Polling GHEL t t WHWH1 CPH t BUSY for program PD for program 55 for erase 30 for sector erase 10 for chip erase Am29F016D PA DQ7# D OUT = Array Data. OUT 35 ...
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... V, 1,000,000 cycles 5.0 Volt, one pin at a time. CC Test Conditions OUT Test Conditions 150° C 125° C Am29F016D Unit Comments sec Excludes 00h programming prior to erasure (Note 4) sec µs Excludes system-level overhead (Note 5) sec , 1,000,000 cycles. Additionally, CC Min Max –1 ...
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... PHYSICAL DIMENSIONS TS 040—40-Pin Standard Thin Small Outline Package November 16, 2009 21444E9 Am29F016D Dwg rev AA; 10/99 37 ...
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... PHYSICAL DIMENSIONS (continued) TS 048—48-Pin Standard Thin Small Outline Package Am29F016D Dwg rev AA; 10/99 21444E9 November 16, 2009 ...
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... PHYSICAL DIMENSIONS (continued) SO 044—44-Pin Small Outline Package November 16, 2009 21444E9 Am29F016D Dwg rev AC; 10/99 39 ...
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... Physical Dimensions Replaced figures with more detailed illustrations. Revision E (May 19, 2000) Global Changed part number to Am29F016D. This reflects the new 0.23 µm process technology upon which this de- vice will now be built. The Am29F016D is compatible with the previous 0.32 µm Am29F016B device, with the exception of the sec- tor group protect and unprotect algorithms ...
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... Added table of contents. Removed Preliminary status from document. Revision E+2 (March 23, 2001) Common Flash Memory Interface (CFI) Added section. Table 9, Am29F016D Command Definitions Corrected the addresses for the three-cycle unlock by- pass command sequence. Added Note 9 and CFI Query command to table. Revision E+3 (June 4, 2004) ...
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... EcoRAM™ and combinations thereof, are trademarks and registered trademarks of Spansion LLC in the United States and other countries. Other names used are for informational purposes only and may be trademarks of their respective owners ® ® , the Spansion logo, MirrorBit Am29F016D ® , MirrorBit Eclipse™, ORNAND™, 21444E9 November 16, 2009 ...