ST62T62CB6 STMicroelectronics, ST62T62CB6 Datasheet - Page 12

• Manufacturer Part Number: ST62T62CB6
• Description: 8BIT MCU OTP 2K+EEPROM, 62T62, DIP
• Manufacturer: STMicroelectronics

Specifications of ST62T62CB6

• Controller Family/series: ST6
• No. Of I/o's: 9
• Eeprom Memory Size: 64Byte
• Ram Memory Size: 128Byte
• Cpu Speed: 8MHz
• No. Of: RoHS Compliant
• Core Size: 8bit
• Program Memory Size: 1836B
• Oscillator Type: External Only
• Processor Series: ST62T6x
• Core: ST6
• Data Bus Width: 8 bit
• Program Memory Type: EPROM
• Data Ram Size: 128 B
• Interface Type: SPI, UART
• Maximum Clock Frequency: 8 MHz
• Number Of Programmable I/os: 9
• Number Of Timers: 2
• Operating Supply Voltage: 3 V to 6 V
• Maximum Operating Temperature: + 85 C
• Mounting Style: Through Hole
• Package / Case: PDIP-16
• Development Tools By Supplier: ST62GP-EMU2, ST62E2XC-EPB/110, ST62E6XC-EPB/US, STREALIZER-II
• Minimum Operating Temperature: - 40 C
• On-chip Adc: 8 bit
• Lead Free Status / Rohs Status: Details

ST62T52C ST62T62C/E62C
MEMORY MAP (Cont’d)
1.3.7 EEPROM Description
EEPROM memory is located in 64-byte pages in
data space. This memory may be used by the user
program for non-volatile data storage.
Data space from 00h to 3Fh is paged as described
in
rectly by addressing these paged sections of data
space.
The EEPROM does not require dedicated instruc-
tions for read or write access. Once selected via the
Data RAM Bank Register, the active EEPROM
page is controlled by the EEPROM Control Regis-
ter (EECTL), which is described below.
Bit E20FF of the EECTL register must be reset prior
to any write or read access to the EEPROM. If no
bank has been selected, or if E2OFF is set, any ac-
cess is meaningless.
Programming must be enabled by setting the
E2ENA bit of the EECTL register.
The E2BUSY bit of the EECTL register is set when
the EEPROM is performing a programming cycle.
Any access to the EEPROM when E2BUSY is set
is meaningless.
Provided E2OFF and E2BUSY are reset, an EEP-
ROM location is read just like any other data loca-
tion, also in terms of access time.
Writing to the EEPROM may be carried out in two
modes: Byte Mode (BMODE) and Parallel Mode
Table 4. Row Arrangement for Parallel Writing of EEPROM Locations
Note: The EEPROM is disabled as soon as STOP instruction is executed in order to achieve the lowest
power-consumption.
12/78
Table 4
ROW7
ROW6
ROW5
ROW4
ROW3
ROW2
ROW1
ROW0
Byte
. EEPROM locations are accessed di-
Up to 8 bytes in each row may be programmed simultaneously in Parallel Write mode.
0
The number of available 64-byte banks (1 or 2) is device dependent.
1
2
3
(PMODE). In BMODE, one byte is accessed at a
time, while in PMODE up to 8 bytes in the same
row are programmed simultaneously (with conse-
quent speed and power consumption advantages,
the latter being particularly important in battery
powered circuits).
General Notes:
Data should be written directly to the intended ad-
dress in EEPROM space. There is no buffer mem-
ory between data RAM and the EEPROM space.
When the EEPROM is busy (E2BUSY = “1”)
EECTL cannot be accessed in write mode, it is
only possible to read the status of E2BUSY. This
implies that as long as the EEPROM is busy, it is
not possible to change the status of the EEPROM
Control Register. EECTL bits 4 and 5 are reserved
and must never be set.
Care is required when dealing with the EECTL reg-
ister, as some bits are write only. For this reason,
the EECTL contents must not be altered while ex-
ecuting an interrupt service routine.
If it is impossible to avoid writing to this register
within an interrupt service routine, an image of the
register must be saved in a RAM location, and
each time the program writes to EECTL it must
also write to the image register. The image register
must be written to first so that, if an interrupt oc-
curs between the two instructions, the EECTL will
not be affected.
4
5
6
7
Dataspace
addresses.
Banks 0 and 1.
38h-3Fh
30h-37h
28h-2Fh
20h-27h
18h-1Fh
10h-17h
08h-0Fh
00h-07h