AD5232BRUZ50 Analog Devices Inc, AD5232BRUZ50 Datasheet - Page 4

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AD5232BRUZ50

Manufacturer Part Number
AD5232BRUZ50
Description
IC,Digital Potentiometer,CMOS,TSSOP,16PIN,PLASTIC
Manufacturer
Analog Devices Inc
Datasheet

Specifications of AD5232BRUZ50

Taps
256
Resistance (ohms)
50K
Number Of Circuits
2
Temperature Coefficient
600 ppm/°C Typical
Memory Type
Non-Volatile
Interface
4-Wire SPI Serial
Voltage - Supply
2.7 V ~ 5.5 V, ±2.25 V ~ 2.75 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-TSSOP
Resistance In Ohms
50K
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With
EVAL-AD5232-10EBZ - BOARD EVALUATION FOR AD5232-10
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant

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AD5232
Parameter
DYNAMIC CHARACTERISTICS
FLASH/EE MEMORY RELIABILITY
1
2
3
4
5
6
7
8
9
10
11
Typical parameters represent average readings at 25°C and V
Resistor position nonlinearity (R-INL) error is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. I
400 μA @ V
INL and DNL are measured at V
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions (see Figure 23).
The A, B, and W resistor terminals have no limitations on polarity with respect to each other. Dual supply operation enables ground-referenced bipolar signal
adjustment.
Guaranteed by design; not subject to production test.
Common-mode leakage current is a measure of the dc leakage from any A, B, or W terminal to a common-mode bias level of V
Transfer (XFR) mode current is not continuous. Current is consumed while the EEMEMx locations are read and transferred to the RDACx register (see Figure 13).
P
All dynamic characteristics use V
Endurance is qualified to 100,000 cycles per JEDEC Std. 22, Method A117 and measured at −40°C, +25°C, and +85°C. Typical endurance at +25°C is 700,000 cycles.
The retention lifetime equivalent at junction temperature (T
derates with junction temperature as shown in Figure 44 in the Flash/EEMEM Reliability section. The AD5232 contains 9,646 transistors. Die size = 69 mil × 115 mil,
7,993 sq. mil.
DISS
Bandwidth
Total Harmonic Distortion
V
Resistor Noise Voltage
Crosstalk (C
Analog Crosstalk (C
Endurance
Data Retention
W
is calculated from (I
Settling Time
DD
= 5 V for the R
10
W1
/C
11
W2
)
DD
W1
× V
/C
AB
DD
W2
= 10 kΩ version, I
W
) + (I
)
DD
with the RDACx configured as a potentiometer divider similar to a voltage output digital-to-analog converter. V
5, 9
= +2.5 V and V
SS
× V
SS
).
W
Symbol
THD
t
e
C
C
S
N_WB
~ 50 μA for the R
T
TA
SS
= −2.5 V, unless otherwise noted.
w
DD
J
Conditions
−3 dB, BW_10kΩ, R = 10 kΩ
V
V
V
V
for R
R
V
adjacent VR making full-scale code change
V
5 V p-p @ f = 10 kHz; Code
) = 55°C, as per JEDEC Std. 22, Method A117. Retention lifetime, based on an activation energy of 0.6 eV,
A
A
DD
W
WB
A
A1
= 5 V.
= 1 V rms, V
= 1 V rms, V
= V
= 0.50% error band, Code 0x00 to Code 0x80
= V
AB
= 5 V, V
= 5 kΩ, f= 1 kHz
AB
= 50 kΩ version, and I
DD
DD
= 10 kΩ/50 kΩ/100 kΩ
, V
, V
Rev. A | Page 4 of 24
B
SS
B1
= 0 V, measure V
= 0 V, V
= 0 V, measure V
B
B
= 0 V, f = 1 kHz, R
= 0 V, f = 1 kHz, R
A
= V
W
DD
~ 25 μA for the R
1
, V
= 0x80; Code
W
B
W1
with
= 0 V,
AB
with V
AB
= 50 kΩ, 100 kΩ
= 10 kΩ
W2
AB
2
=
= 100 kΩ version (see Figure 22).
= 0xFF
Min
100
DD
/2.
W
~ 50 μA @ V
Typ
500
0.022
0.045
0.65/3/6
9
−5
−70
100
1
A
DD
= V
Max
= 2.7 V and I
DD
and V
Unit
kHz
%
%
μs
mV/√Hz
nV-sec
dB
kCycles
Years
B
= V
W
~
SS
.

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