S29AL004D70TFI010 Spansion Inc., S29AL004D70TFI010 Datasheet - Page 3

Flash Memory IC

S29AL004D70TFI010

Manufacturer Part Number
S29AL004D70TFI010
Description
Flash Memory IC
Manufacturer
Spansion Inc.
Datasheet

Specifications of S29AL004D70TFI010

Memory Size
4Mbit
Memory Configuration
512K X 8 / 256K X 16
Ic Interface Type
Parallel
Access Time
70ns
Memory Case Style
TSOP
No. Of Pins
48
Operating Temperature Range
-40°C To +85°C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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S29AL004D
4 Megabit (512 K x 8-Bit/256 K x 16-Bit)
CMOS 3.0 Volt-only Boot Sector Flash Memory
Data Sheet
Distinctive Characteristics
Architectural Advantages
Single power supply operation
— 2.7 to 3.6 volt read and write operations for battery-
Manufactured on 200nm process technology
— Compatible with 320nm Am29LV400B and
Flexible sector architecture
— One 16 Kbyte, two 8 Kbyte, one 32 Kbyte, and seven
— One 8 Kword, two 4 Kword, one 16 Kword, and seven
— Supports full chip erase
Unlock Bypass Program Command
— Reduces overall programming time when issuing
Top or bottom boot block configurations
available
Embedded Algorithms
— Embedded Erase algorithm automatically
— Embedded Program algorithm automatically writes
Compatibility with JEDEC standards
— Pinout and software compatible with single-power
— Superior inadvertent write protection
Sector Protection features
— A hardware method of locking a sector to prevent any
— Sectors can be locked in-system or via programming
— Temporary Sector Unprotect feature allows code
powered applications
MBM29LV400T/BC
64 Kbyte sectors (byte mode)
32 Kword sectors (word mode)
multiple program command sequences
preprograms and erases the entire chip or any
combination of designated sectors
and verifies data at specified addresses
supply Flash
program or erase operations within that sector
equipment
changes in previously locked sectors
Publication Number S29AL004D_00
Revision A
Performance Characteristics
Package Options
Software Features
Hardware Features
Amendment 1
High performance
— Access times as fast as 70 ns
Ultra low power consumption (typical values
at 5 MHz)
— 200 nA Automatic Sleep mode current
— 200 nA standby mode current
— 9 mA read current
— 20 mA program/erase current
Cycling Endurance: 1,000,000 cycles per
sector typical
Data Retention: 20 years typical
48-ball FBGA
48-pin TSOP
44-pin SO
Data# Polling and toggle bits
— Provides a software method of detecting program or
Erase Suspend/Erase Resume
— Suspends an erase operation to read data from, or
Ready/Busy# pin (RY/BY#)
— Provides a hardware method of detecting program or
Hardware reset pin (RESET#)
— Hardware method to reset the device to reading array
erase operation completion
program data to, a sector that is not being erased,
then resumes the erase operation
erase cycle completion
data
Issue Date February 18, 2005
INFORMATION
ADVANCE

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