1N5062-TAP Vishay, 1N5062-TAP Datasheet

AVALANCHE DIODE, 2A, 800V, SOD-57

1N5062-TAP

Manufacturer Part Number
1N5062-TAP
Description
AVALANCHE DIODE, 2A, 800V, SOD-57
Manufacturer
Vishay
Datasheet

Specifications of 1N5062-TAP

Repetitive Reverse Voltage Vrrm Max
800V
Forward Current If(av)
2A
Forward Voltage Vf Max
1.15V
Reverse Recovery Time Trr Max
4µs
Forward Surge Current Ifsm Max
50A
Diode Type
Standard Recovery
Product
Standard Recovery Rectifier
Configuration
Single
Reverse Voltage
800 V
Forward Voltage Drop
1.15 V at 2.5 A
Recovery Time
4000 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
1 uA
Mounting Style
SMD/SMT
Package / Case
SOD-57
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Standard Avalanche Sinterglass Diode
Features
Applications
Rectification diode, general purpose
Parts Table
Absolute Maximum Ratings
T
Document Number 86000
Rev. 1.5, 13-Apr-05
• Controlled avalanche characteristics
• Glass passivated
• Low reverse current
• High surge current loading
• Hermetically sealed axial-leaded glass envelope
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
1N5059
1N5060
1N5061
1N5062
Reverse voltage = Repetitive
peak reverse voltage
Peak forward surge current
Average forward current
Junction and storage
temperature range
Max. pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
amb
and WEEE 2002/96/EC
= 25 °C, unless otherwise specified
Parameter
Part
see electrical characteristics
t
R
R
I
p
(BR)R
thJA
thJA
= 10 ms, half-sinewave
= 45 K/W, T
= 100K/W, T
= 1 A, indicutive load
Test condition
V
V
V
V
R
R
R
R
= 200 V; I
= 400 V; I
= 600 V; I
= 800 V; I
amb
amb
= 50 °C
= 75 °C
Type differentiation
FAV
FAV
FAV
FAV
e2
= 2 A
= 2 A
= 2 A
= 2 A
Mechanical Data
Case: SOD-57 Sintered glass case
Terminals: Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight: approx. 369 mg
1N5059
1N5060
1N5061
1N5062
Part
V
V
V
V
1N5059 to 1N5062
T
R
R
R
R
Symbol
j
= V
= V
= V
= V
I
I
I
= T
FSM
SOD-57
SOD-57
SOD-57
SOD-57
E
FAV
FAV
R
RRM
RRM
RRM
RRM
stg
Vishay Semiconductors
- 55 to + 175
Value
200
400
600
800
0.8
50
20
Package
2
www.vishay.com
Unit
mJ
°C
V
V
V
V
A
A
A
1

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1N5062-TAP Summary of contents

Page 1

... FAV V = 400 FAV V = 600 FAV V = 800 FAV Test condition Part 1N5059 1N5060 1N5061 1N5062 = 50 °C amb = 75 °C amb = 1 A, indicutive load 1N5059 to 1N5062 Vishay Semiconductors Package SOD-57 SOD-57 SOD-57 SOD-57 Symbol Value Unit 200 V R RRM 400 V R RRM 600 V R RRM ...

Page 2

... Vishay Semiconductors Maximum Thermal Resistance °C, unless otherwise specified amb Parameter Junction ambient Lead length mm constant board with spacing 25 mm Electrical Characteristics °C, unless otherwise specified amb Parameter Forward voltage 2 Reverse current 100 µA Reverse breakdown voltage I R Reverse recovery time ...

Page 3

... V - Forward Voltage ( V ) 15762 F Figure 4. Max. Forward Current vs. Forward Voltage Package Dimensions in mm (Inches) Sintered Glass Case Cathode Identification SOD-57 26(1.014) min. Document Number 86000 Rev. 1.5, 13-Apr-05 1N5059 to 1N5062 0.1 V 15766 Figure 5. Typ. Diode Capacitance vs. Reverse Voltage 3.6 (0.140)max. ISO Method E 26(1 ...

Page 4

... Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment ...

Page 5

... Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’ ...

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