US1M Vishay, US1M Datasheet

FAST RECOVERY DIODE, 1A, 1KV, DO-214AC

US1M

Manufacturer Part Number
US1M
Description
FAST RECOVERY DIODE, 1A, 1KV, DO-214AC
Manufacturer
Vishay
Datasheet

Specifications of US1M

Repetitive Reverse Voltage Vrrm Max
1kV
Forward Current If(av)
1A
Forward Voltage Vf Max
1.7V
Reverse Recovery Time Trr Max
75ns
Forward Surge Current Ifsm Max
30A
Diode Type
Fast Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Document Number: 88768
Revision: 03-Jul-07
MAJOR RATINGS AND CHARACTERISTICS
MAXIMUM RATINGS (T
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
T
V
I
I
j
F(AV)
FSM
RRM
V
max.
t
rr
F
DO-214AC (SMA)
Surface Mount Ultrafast Rectifier
A
= 25 °C unless otherwise noted)
50 V to 1000 V
50 ns, 75 ns
1.0 V, 1.7 V
150 °C
1.0 A
L
30 A
= 110 °C
SYMBOL
T
V
J
V
I
I
V
F(AV)
, T
FSM
RRM
RMS
DC
STG
US1A
FEATURES
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters and
inverters for consumer, computer, automotive and
telecommunication.
MECHANICAL DATA
Case: DO-214AC (SMA)
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
UA
• Low profile package
• Ideal for automated placement
• Glass passivated chip junction
• Ultrafast reverse recovery time
• Low switching losses, high efficiency
• High forward surge capability
• Meets MSL level 1, per J-STD-020C, LF max peak
• Solder Dip 260 °C, 40 seconds
• Component in accordance to RoHS 2002/95/EC
50
35
50
of 260 °C
and WEEE 2002/96/EC
US1B
100
100
UB
70
Vishay General Semiconductor
US1D
200
140
200
UD
- 55 to + 150
US1G
1.0
30
400
280
400
UG
US1A thru US1M
US1J US1K US1M
600
420
600
UJ
800
560
800
UK
www.vishay.com
1000
1000
UM
700
UNIT
°C
V
V
V
A
A
1

Related parts for US1M

US1M Summary of contents

Page 1

... 100 RRM V 35 RMS V 50 100 DC = 110 ° F(AV) I FSM STG US1A thru US1M Vishay General Semiconductor US1D US1G US1J US1K US1M 200 400 600 800 1000 70 140 280 420 560 200 400 600 800 1000 1 150 www.vishay.com UNIT UM V 700 ...

Page 2

... US1A thru US1M Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous at 1.0 A (1) forward voltage Maximum DC reverse current °C A rated DC blocking voltage T = 100 ° 0 Maximum reverse recovery time Typical junction capacitance at 4 MHz Note: (1) Pulse test: 300 µs pulse width duty cycle ...

Page 3

... T = 125 ° 100 ° US1J-US1M ° Percent of Rated Peak Reverse Voltage (%) ° 1.0 MHz mVp-p US1A - US1G sig US1J - US1M 1 0 Reverse Voltage (V) Figure 7. Typical Junction Capacitance 1 0.01 0 Pulse Duration (s) Figure 8. Typical Transient Thermal Impedance www.vishay.com 100 100 100 3 ...

Page 4

... US1A thru US1M Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) 0.065 (1.65) 0.049 (1.25) 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) www.vishay.com 4 DO-214AC (SMA) Cathode Band 0.066 MIN. (1.68 MIN.) 0.110 (2.79) 0.100 (2.54) 0.177 (4.50) 0.157 (3.99) 0.060 MIN. ...

Page 5

... Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right ...

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