DSA75-18B IXYS SEMICONDUCTOR, DSA75-18B Datasheet

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DSA75-18B

Manufacturer Part Number
DSA75-18B
Description
DIODE,RECTI,1200V,110A,STUD ANOD,DO5
Manufacturer
IXYS SEMICONDUCTOR
Datasheet

Specifications of DSA75-18B

Repetitive Reverse Voltage Vrrm Max
1.8kV
Forward Current If(av)
110A
Forward Voltage Vf Max
1.17V
Forward Surge Current Ifsm Max
1.5kA
Operating Temperature Range
-40°C
Diode Type
Avalanche
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Rectifier Diode
Avalanche Diode
V
Symbol
I
I
P
I
I
T
T
T
M
Weight
Symbol
I
V
V
r
R
R
d
d
a
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2000 IXYS All rights reserved
1300
1300
1700
1900
F(RMS)
F(AV)M
FSM
2
R
T
t
VJ
VJM
stg
S
A
RSM
RSM
F
T0
thJC
thJH
V
900
d
Only for Avalanche Diodes
V
1300
1760
1950
(BR)min
V
-
-
Test Conditions
T
T
DSA(I) types, T
T
V
T
V
T
V
T
V
Mounting torque
Test Conditions
T
I
For power-loss calculations only
T
DC current
DC current
Creepage distance on surface
Strike distance through air
Max. allowable acceleration
F
VJ
case
VJ
VJ
VJ
VJ
VJ
VJ
R
R
R
R
ÿ
= T
= 100°C; 180° sine
= 45°C;
= 0
= T
= 0
= 45°C
= 0
= T
= 0
= T
= 150 A; T
= T
1200
1200
1600
1800
V
V
800
VJM
VJM
VJM
VJM
VJM
RRM
; V
R
= V
VJ
VJ
DS 75-08B
DS 75-12B
DSA 75-12B
DSA 75-16B
DSA 75-18B
= T
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
= 25°C
RRM
Anode
on stud
VJM
, t
p
= 10 ms
DSI 75-08B
DSI 75-12B
DSAI 75-12B
DSAI 75-16B
DSAI 75-18B
Cathode
on stud
Characteristic Values
-40...+180
-40...+180
Maximum Ratings
£
£
2.4-4.5
21-40
1400
1500
1250
1310
9800
9450
7820
7210
1.17
0.75
4.05
160
110
180
100
0.5
0.9
3.9
20
21
6
2
lb.in.
K/W
K/W
m/s
mm
mm
A
Nm
mW
kW
A
A
A
mA
°C
°C
°C
A
A
A
A
A
A
V
V
g
2
2
2
2
s
s
s
s
2
V
I
I
DO-203 AB
C
A
A = Anode
Features
Applications
Advantages
Dimensions in mm (1 mm = 0.0394")
F(RMS)
F(AV)M
International standard package,
JEDEC DO-203 AB (DO-5)
Planar glassivated chips
High power rectifiers
Reduced protection circuits
Field supply for DC motors
Power supplies
Space and weight savings
Simple mounting
Improved temperature and power
cycling
RRM
DS 75
DSA 75
DS
DSA
= 800-1800 V
= 160 A
= 110 A
C = Cathode
1/4-28UNF
DSI 75
DSAI 75
A
C
DSI
DSAI
1 - 2
744

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DSA75-18B Summary of contents

Page 1

Rectifier Diode Avalanche Diode Anode ÿ RSM (BR)min RRM stud 900 - 800 DS 75-08B 1300 - 1200 DS 75-12B 1300 1300 1200 DSA 75-12B 1700 1760 1600 DSA 75-16B 1900 1950 1800 ...

Page 2

A 150 180° 25°C VJ 100 50 0 0.0 0.5 1.0 1 Fig. 1 Forward characteristics 200 W 150 P F 100 DC 180° sin 50 120° 60° ...

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