1N5617GPHE3/54 Vishay, 1N5617GPHE3/54 Datasheet

1N5617GPHE3/54

Manufacturer Part Number

1N5617GPHE3/54

Description

Diode

Manufacturer

Vishay

Datasheet

1.1N5617GP-E354.pdf (4 pages)

Specifications of 1N5617GPHE3/54

Repetitive Reverse Voltage Vrrm Max

400V

Forward Current If(av)

Forward Voltage Vf Max

1.2V

Reverse Recovery Time Trr Max

150ns

Forward Surge Current Ifsm Max

50A

Diode Type

Fast Recovery

Voltage - Forward (vf) (max) @ If

1.2V @ 1A

Voltage - Dc Reverse (vr) (max)

400V

Current - Average Rectified (io)

Current - Reverse Leakage @ Vr

500nA @ 400V

Speed

Fast Recovery =< 500ns, > 200mA (Io)

Reverse Recovery Time (trr)

150ns

Mounting Type

Through Hole

Package / Case

DO-204AC, DO-15, Axial

Product

Switching Diodes

Peak Reverse Voltage

400 V

Forward Continuous Current

1 A

Max Surge Current

50 A

Configuration

Single

Recovery Time

150 ns

Forward Voltage Drop

1.2 V

Maximum Operating Temperature

+ 175 C

Minimum Operating Temperature

- 65 C

Mounting Style

Through Hole

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Capacitance @ Vr, F

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

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Document Number: 88522

Revision: 15-Mar-11

THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

PRIMARY CHARACTERISTICS

MAXIMUM RATINGS (T

PARAMETER

Maximum repetitive peak reverse voltage

Maximum RMS voltage

Maximum DC blocking voltage

Maximum average forward rectified current

0.375" (9.5 mm) lead length at T

Peak forward surge current 8.3 ms single half

sine-wave superimposed on rated load

Operating junction and

storage temperature range

F(AV)

FSM

RRM

max.

Glass Passivated Junction Fast Switching Rectifier

SUPERECTIFIER

DO-204AC (DO-15)

DiodesAmericas@vishay.com, DiodesAsia@vishay.com,

For technical questions within your region, please contact one of the following:

150 ns, 250 ns, 300 ns, 500 ns

= 55 °C

= 25 °C unless otherwise noted)

200 V to 1000 V

175 °C

0.5 μA

1.0 A

1.2 V

50 A

This datasheet is subject to change without notice.

SYMBOL

, T

F(AV)

FSM

RRM

RMS

STG

1N5615GP

200

140

200

FEATURES

• Superectifier structure for high reliability condition

• Cavity-free glass-passivated junction

• Fast switching for high efficiency

• Low leakage current

• High forward surge capability

• Meets environmental standard MIL-S-19500

• Solder dip 275 °C max. 10 s, per JESD 22-B106

• AEC-Q101 qualified

• Compliant to RoHS Directive 2002/95/EC and in

TYPICAL APPLICATIONS

For use in fast switching rectification of power supply,

inverters, converters and freewheeling diodes for consumer,

automotive and telecommunication.

MECHANICAL DATA

Case: DO-204AC, molded epoxy over glass body

Molding compound meets UL 94 V-0 flammability rating

Base P/N-E3 - RoHS compliant, commercial grade

Base P/NHE3 - RoHS compliant, AEC-Q101 qualified

Terminals: Matte tin plated leads, solderable per

J-STD-002 and JESD 22-B102

E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix

meets JESD 201 class 2 whisker test

Polarity: Color band denotes cathode end

accordance to WEEE 2002/96/EC

1N5617GP

400

280

400

DiodesEurope@vishay.com

1N5615GP thru 1N5623GP

Vishay General Semiconductor

- 65 to + 175

1N5619GP

600

420

600

1.0

1N5621GP

800

560

800

www.vishay.com/doc?91000

1N5623GP

1000

700

www.vishay.com

UNIT

°C

Related parts for 1N5617GPHE3/54

1N5617GPHE3/54 Summary of contents

Page 1

... Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1N5615GP thru 1N5623GP Vishay General Semiconductor FEATURES • Superectifier structure for high reliability condition • Cavity-free glass-passivated junction • Fast switching for high efficiency • ...

Page 2

... Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (T PARAMETER TEST CONDITIONS Maximum instantaneous 1.0 A forward voltage Maximum DC reverse °C A current at rated 100 °C blocking voltage A Maximum reverse recovery time Typical junction 4 MHz capacitance THERMAL CHARACTERISTICS (T PARAMETER Typical thermal resistance ...

Page 3

... Document Number: 88522 For technical questions within your region, please contact one of the following: Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT 1N5615GP thru 1N5623GP Vishay General Semiconductor 100 10 1 1.4 1.6 ...

Page 4

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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