D-PAK (TO-252AA)
PRODUCT SUMMARY
Package
D-PAK (TO-252AA)
I
F(AV)
V
R
V
at I
See Electrical table
F
F
I
RM
T
max.
J
Diode variation
E
AS
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
I
Rectangular waveform
F(AV)
V
RRM
I
t
= 5 μs sine
FSM
p
V
3 Apk, T
F
T
J
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
Maximum working peak reverse voltage
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average forward current
See fig. 5
Maximum peak one cycle
non-repetitive surge current
See fig. 7
Non-repetitive avalanche energy
Repetitive avalanche current
Document Number: 94200
For technical questions within your region, please contact one of the following:
Revision: 14-Jan-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
Schottky Rectifier, 3.5 A
FEATURES
Base
cathode
• Popular D-PAK outline
4, 2
• Small foot print, surface mountable
• Low forward voltage drop
• High frequency operation
1
3
Anode
Anode
• Guard ring for enhanced ruggedness and long term
reliability
• Compliant to RoHS Directive 2002/95/EC
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
3.5 A
100 V
DESCRIPTION
The VS-30WQ10FNPbF surface mount Schottky rectifier
4.9 mA at 125 °C
has been designed for applications requiring low forward
150 °C
drop and small foot prints on PC board. Typical applications
are in disk drives, switching power supplies, converters,
Single die
freewheeling diodes, battery charging, and reverse battery
5 mJ
protection.
CHARACTERISTICS
= 125 °C
J
- 40 to 150
SYMBOL
V
R
V
RWM
SYMBOL
TEST CONDITIONS
I
50 % duty cycle at T
= 135 °C, rectangular waveform
F(AV)
C
5 μs sine or 3 μs rect. pulse
I
FSM
10 ms sine or 6 ms rect. pulse
E
T
= 25 °C, I
= 1 A, L = 10 mH
AS
J
AS
Current decaying linearly to zero in 1 μs
I
AR
Frequency limited by T
J
VS-30WQ10FNPbF
Vishay Semiconductors
VALUES
UNITS
3.5
A
100
V
440
A
0.63
V
°C
VS-30WQ10FNPbF
100
VALUES
3.5
Following any rated load
440
condition and with rated
70
V
applied
RRM
5.0
0.5
maximum V
= 1.5 x V
typical
A
R
www.vishay.com
DiodesEurope@vishay.com
UNITS
V
UNITS
A
mJ
A
1