BAS116 Infineon Technologies, BAS116 Datasheet

DIODE, LOW LEAKAGE, SOT-23

BAS116

Manufacturer Part Number
BAS116
Description
DIODE, LOW LEAKAGE, SOT-23
Manufacturer
Infineon Technologies
Datasheet

Specifications of BAS116

Diode Type
Small Signal
Forward Current If(av)
250mA
Repetitive Reverse Voltage Vrrm Max
75V
Forward Voltage Vf Max
1.25V
Reverse Recovery Time Trr Max
1.5µs
Forward Surge Current Ifsm Max
4.5A
Diode
RoHS Compliant
Packages
SOT23

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BAS116
Manufacturer:
NXP
Quantity:
300 000
Part Number:
BAS116
Manufacturer:
ST
0
Part Number:
BAS116
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BAS116-7-F
Manufacturer:
Diodes Inc
Quantity:
49 558
Company:
Part Number:
BAS116-7-F
Quantity:
5 000
Company:
Part Number:
BAS116-7-F
Quantity:
5 000
Part Number:
BAS116-7-G
Manufacturer:
DIODES
Quantity:
3 000
Part Number:
BAS116235
Manufacturer:
NXP Semiconductors
Quantity:
38 521
Part Number:
BAS116E6327
Manufacturer:
NXP
Quantity:
7 084
Part Number:
BAS116H
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Part Number:
BAS116H,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Part Number:
BAS116LPH4-7B
Manufacturer:
DIODES/美台
Quantity:
20 000
Part Number:
BAS116LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BAS116T-7-F
Quantity:
9 000
Peak reverse voltage
Repetitive peak forward current
Non-repetitive peak surge forward current
t = 1 µs
t = 1 s
Junction temperature
Thermal Resistance
Junction - soldering point
BAS116
1
Silicon Low Leakage Diode
• Low-leakage applications
• Medium speed switching times
BAS116
Maximum Ratings at T
Parameter
Diode reverse voltage
Forward current
Total power dissipation
T
Storage temperature
Parameter
Type
BAS116
For calculation of R
S
≤ 54°C
thJA
please refer to Application Note Thermal Resistance
A
1)
= 25°C, unless otherwise specified
SOT23
Package
1
Configuration
single
I
I
T
Symbol
V
V
I
P
T
Symbol
R
FRM
FSM
F
j
stg
R
RM
tot
thJS
-65 ... 150
Value
Value
≤ 260
250
370
150
4.5
0.5
80
85
-
BAS116...
2005-10-18
Marking
JVs
V
mA
-
A
mW
°C
K/W
Unit
Unit

Related parts for BAS116

BAS116 Summary of contents

Page 1

... Junction - soldering point BAS116 1 For calculation of R please refer to Application Note Thermal Resistance thJA Package Configuration SOT23 single Symbol FRM I FSM P tot stg Symbol R thJS 1 BAS116... Marking JVs Value Unit 250 4.5 0.5 370 mW 150 °C -65 ... 150 Value Unit ≤ 260 K/W 2005-10-18 ...

Page 2

... MHz R Reverse recovery time mA mA, measured 100 Ω Test circuit for reverse recovery time D.U.T. Ι 25°C, unless otherwise specified A Symbol V (BR 1mA , R Puls generator: t Oscillograph Oscillograph 50Ω EHN00022 2 BAS116... Values Unit min. typ. max 900 - - 1000 - - 1100 - - 1250 - 0.6 1.5 µ ...

Page 3

... Parameter F EHB00053 1.5 max V F 1.0 typ 0.5 100 ˚C 150 Forward current I F BAS116 EHB00054 300 mA 250 225 200 175 max 150 125 100 1 BAS116... = ƒ BAS 116 V Ι 100 = ƒ 105 120 ° EHB00056 = 150 0.1 mA ˚C ...

Page 4

... Permissible Puls Load R thJS 0,5 0,2 0,1 0,05 0, 0,01 0,005 ƒ Permissible Pulse Load Fmax BAS116... = ƒ FDC 0.005 0.01 0.02 0.05 0.1 0.2 0 2005-10- ...

Page 5

... Reel ø330 mm = 10.000 Pieces/Reel Pin 1 Package SOT23 2.9 ±0 +0.1 0.4 -0.05 C 0.95 1.9 0. Lead width can be 0.6 max. in dambar area 0.8 0.8 1.2 Manufacturer EH Date code (Year/Month) Type code Example 4 0.9 3.15 5 BAS116... 1 ±0.1 0.1 MAX 2003, July BCW66 0.2 1.15 2005-10-18 ...

Page 6

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. 6 BAS116... 2005-10-18 ...

Related keywords