ARF477FL MICROSEMI, ARF477FL Datasheet

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ARF477FL

Manufacturer Part Number
ARF477FL
Description
RF FET, N Channel, 500V, Push-Pull
Manufacturer
MICROSEMI
Datasheet

Specifications of ARF477FL

Drain Source Voltage Vds
500V
Continuous Drain Current Id
15A
Power Dissipation Pd
750W
Operating Temperature Range
-55°C To +175°C
No. Of Pins
6
Transistor Type
RF MOSFET
Channel Type
N
Channel Mode
Enhancement
Continuous Drain Current
15A
Drain Source Voltage (max)
500V
Output Power (max)
400W
Power Gain (typ)@vds
16dB
Frequency (max)
100MHz
Pin Count
8
Forward Transconductance (typ)
5.6S
Input Capacitance (typ)@vds
1200@150VpF
Output Capacitance (typ)@vds
150@150VpF
Reverse Capacitance (typ)
60@150VpF
Operating Temp Range
-55C to 175C
Drain Efficiency (typ)
55%
Mounting
Screw
Number Of Elements
2
Power Dissipation (max)
750000mW
Vswr (max)
10
Screening Level
Military
Lead Free Status / Rohs Status
Compliant
The ARF477FL is a matched pair of RF power transistors in a common source confi guration. It is designed for high
voltage push-pull or parallel operation in narrow band ISM and MRI power amplifi ers up to 100 MHz.
Thermal Characteristics
MAXIMUM RATINGS
Static Electrical Characteristics
RF POWER MOSFET
N - CHANNEL PUSH - PULL PAIR
Specifi ed 150 Volt, 65 MHz Characteristics:
Symbol
Symbol
Symbol
T
g
V
V
V
BV
V
J
R
V
fs1
V
I
R
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
, T
DS(ON)
I
GS(TH)
GS(TH)
P
T
DSS
GSS
g
DGO
I
DSS
θJHS
/g
D
GS
θJC
DSS
fs
D
L
STG
fa2
Output Power = 400 Watts
Gain = 15dB (Class AB)
Effi ciency = 50% min
Parameter
Drain-Source Breakdown Voltage (V
On State Drain Voltage
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Forward Transconductance (V
Forward Transconductance Match Ratio (V
Gate Threshold Voltage (V
Gate Threshold Voltage Match (V
Parameter
Drain-Source Voltage
Drain-Gate Voltage
Continuous Drain Current @ T
Gate-Source Voltage
Total Power Dissipation @ T
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063” from Case for 10 Sec.
Parameter
Junction to Case
Junction to Sink
(High Effi ciency Thermal Joint Compound and Planar Heat Sink Surface.)
1
Microsemi Website - http://www.microsemi.com
(I
DS
D(ON)
C
= V
= 25°C
DS
C
= 7.5A, V
= 25°C (each device)
= 15V, I
GS
GS
DS
, I
DS
DS
= ±30V, V
= V
GS
D
= V
= 50V
= 50mA)
= 0V, I
GS
D
GS
DSS
, I
= 7.5A)
DS
D
= 10V)
DSS
, V
= 50mA)
D
= 15V, I
DS
, V
= 250 μA)
GS
= 0V)
= 0V)
GS
= 0, T
D
= 5A)
C
High Performance Push-Pull RF Package.
High Voltage Breakdown and Large SOA
Low Thermal Resistance.
RoHS Compliant
Common Source
Push-Pull Pair
= 125°C)
for Superior Ruggedness.
All Ratings: T
G
G
S
S
D
D
S
S
C
= 25°C unless otherwise specifi ed.
165V
ARF477FL
Min
500
3.5
0.9
Min
3
-55 to 175
Ratings
400W
Typ
0.18
0.30
500
500
±30
750
300
2.9
5.6
Typ
15
ARF477FL
±100
Max
250
Max
0.32
1.1
0.2
25
0.2
4
5
8
100MHz
mhos
Volts
°C/W
Unit
Unit
Unit
μA
nA
°C
W
V
V
V
A

Related parts for ARF477FL

ARF477FL Summary of contents

Page 1

... RF POWER MOSFET N - CHANNEL PUSH - PULL PAIR The ARF477FL is a matched pair of RF power transistors in a common source confi guration designed for high voltage push-pull or parallel operation in narrow band ISM and MRI power amplifi ers up to 100 MHz. • Specifi ed 150 Volt, 65 MHz Characteristics: • ...

Page 2

... Min Typ Max 125V 300W No Degradation in Output Power C iss C oss C rss DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS OPERATION HERE LIMITED BY R (ON =+25° =+150°C J SINGLE PULSE 100 500 V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS Figure 4, Typical Maximum Safe Operating Area ARF477FL Unit Unit dB % 150 ...

Page 3

... Conjugate of optimum load for 400 Watts output Note (˚ are the external thermal .108 .0915 EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only .0111F .133F the case to junction. Z (Ω) Z (Ω) in OUT 0.82 7 =125V dd ARF477FL Duty Factor Peak θ 1.0 ...

Page 4

... N-m). .200 .300 .005 .040 ARF477FL HAZARDOUS MATERIAL WARNING The white ceramic portion of the device between leads and mounting surface is beryllium oxide, BeO. Beryllium oxide dust is toxic when inhaled. Care must be taken dur- ing handling and mounting to avoid damage to this area. ...

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