BLF881 NXP Semiconductors, BLF881 Datasheet
BLF881
Specifications of BLF881
Available stocks
Related parts for BLF881
BLF881 Summary of contents
Page 1
... BLF881; BLF881S UHF power LDMOS transistor Rev. 3 — 7 December 2010 1. Product profile 1.1 General description A 140 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 140 W from GHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital transmitter applications ...
Page 2
... Ordering information Name Description - flanged LDMOST ceramic package; 2 mounting holes; 2 leads SOT467C - earless LDMOST ceramic package; 2 leads All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor Simplified outline Graphic symbol [ © ...
Page 3
... 3. GSth MHz MHz MHz GS DS Conditions All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor Conditions Min Max - 104 −0.5 +13 −65 +150 - 200 Conditions = 80 °C; [1] T case L(AV) Min Typ [1] 104 - [1] 1.4 ...
Page 4
... Product data sheet Conditions 200 C oss (pF) 160 120 MHz. GS Output capacitance as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor Min Typ - −33 [1] - [2] - 8.3 ...
Page 5
... CW power gain and drain efficiency as function of load power; typical values 0001aal076 70 η D (%) IMD3 60 (dBc 120 160 P (W) L(AV) Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor 001aal075 70 η D (%) 120 160 200 P ( −20 − ...
Page 6
... P (W) L(AV) (1) Lower adjacent channel (2) Upper adjacent channel Fig 6. All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor 0 (1) ( L(AV 0.5 A; measured in a common-source DS Dq narrowband 860 MHz test circuit. ...
Page 7
... DVB-T PAR at 0.01 % probability on the CCDF and drain efficiency as function of frequency; typical values 7.3 Ruggedness in class-AB operation The BLF881 and BLF881S are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 860 MHz at rated power. Ruggedness is measured in the application circuit as described in ...
Page 8
... BLF881 electromigration All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor (4) (5) (6) (9) (10) (11 (A) DS(DC) 001aal082 6 © NXP B.V. 2010. All rights reserved. ...
Page 9
... F/m; height = 0.79 mm; Cu (top/bottom metallization); r All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor Remarks [1] [2] [1] [1] [1] [1] TDK C570X7R1H106KT000N or capacitor of same quality. [3] ...
Page 10
L23 C25 L22 C24 See Table 8 for a list of components. Fig 10. Class-AB common-source broadband amplifier C11 C12 C27 C26 C20 C1 C3 L21 L20 L1 L2 C23 C22 C21 ...
Page 11
... Fig 11. Printed-Circuit Board (PCB) for class-AB common source amplifier BLF881_BLF881S Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor 40 mm 001aaj289 © NXP B.V. 2010. All rights reserved. 76.2 mm ...
Page 12
... Fig 12. Component layout for class-AB common source amplifier BLF881_BLF881S Product data sheet R2 C27 L6 R1 C20 C22 L20 L21 C21 L7 All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor C11 C9 C12 C10 ...
Page 13
... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor 2.21 20.45 5.97 14 ...
Page 14
... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor 2.21 9.78 5.97 0.25 1.96 9 ...
Page 15
... Data sheet status Product data sheet 3: In the conditions column of V Product data sheet Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor Change notice Supersedes - BLF881_BLF881S v.2 the value of I ...
Page 16
... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
Page 17
... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 3 — 7 December 2010 BLF881; BLF881S UHF power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
Page 18
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF881_BLF881S All rights reserved. Date of release: 7 December 2010 ...