D2219UK SEMELAB, D2219UK Datasheet

no-image

D2219UK

Manufacturer Part Number
D2219UK
Description
MOSFET,RF,N CH,SE,12V,2.5W,1GHZ,SO8
Manufacturer
SEMELAB
Datasheet

Specifications of D2219UK

Drain Source Voltage Vds
40V
Continuous Drain Current Id
2A
Power Dissipation Max
17.5W
Operating Frequency Range
1MHz To 2GHz
Rf Transistor Case
SOIC
No. Of Pin
RoHS Compliant
Transistor Type
RF FET
No. Of Pins
8
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
D2219UK
Manufacturer:
SEMELAB
Quantity:
20 000
MECHANICAL DATA
ABSOLUTE MAXIMUM RATINGS
P
BV
BV
I
T
T
Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed
to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.
Semelab encourages customers to verify that datasheets are current before placing orders.
Semelab plc.
D(sat)
stg
j
D
L
DSS
GSS
PIN 1 – SOURCE
PIN 2 – DRAIN
PIN 3 – DRAIN
PIN 4 – SOURCE
D
K
J
8
7
6
5
Dim.
G
M
A
B
C
D
E
F
H
K
N
P
J
L
4.06
5.08
1.27
0.51
3.56
4.06
1.65
0.76
0.51
1.02
0.20
2.18
4.57
mm
45°
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
SO8 PACKAGE
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
A
E
F
sales@semelab.co.uk
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
±0.08
+0.25
±0.08
±0.08
-0.00
Max.
Max.
Max.
Max.
Min.
Min.
Tol.
H
G
1
2
3
4
PIN 5 – SOURCE
PIN 6 – GATE
PIN 7 – GATE
PIN 8 – SOURCE
Inches
0.160
0.200
0.050
0.020
0.140
0.160
0.065
0.030
0.020
0.040
0.008
0.086
0.180
C
45°
M
B
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
±0.003
+0.010
±0.003
±0.003
-0.000
Max.
Max.
Max.
Max.
Min.
Min.
Tol.
ROHS COMPLIANT
N
Website:
(T
case
P
http://www.semelab.co.uk
= 25°C unless otherwise stated)
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• VERY LOW C
• SIMPLE BIAS CIRCUITS
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM
APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
MULTI-PURPOSE SILICON
2.5W – 12.5V – 1GHz
GOLD METALLISED
SINGLE ENDED
DMOS RF FET
METAL GATE RF SILICON FET
rss
–65 to 150°C
Document Number 6946
17.5W
200°C
±20V
D2219UK
40V
2A
TetraFET
Issue 1

Related parts for D2219UK

D2219UK Summary of contents

Page 1

... Max. 0° Min. 7° Max. ±0.003 Max. ±0.003 (T = 25°C unless otherwise stated) case Website: http://www.semelab.co.uk D2219UK METAL GATE RF SILICON FET DMOS RF FET SINGLE ENDED rss 17.5W 40V ±20V 2A –65 to 150°C 200°C Document Number 6946 TetraFET Issue 1 ...

Page 2

... Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co. 25°C unless otherwise stated) case Test Conditions 10mA 12. 20V 10mA 10V 12. 0. 1GHz – 1MHz 12. 1MHz 12. 1MHz DS GS Website: http://www.semelab.co.uk D2219UK Min. Typ. Max. Unit μ 0. 20:1 — Max. 10° Document Number 6946 Issue 1 ...

Page 3

... Website: http://www.semelab.co.uk D2219UK F= 1GHz Idq= 0.1A Vds= 12.5V 0.5 1 1.5 2 2.5 Pout (W) Figure 1GHz 1 =999.9MHz F 2 Idq= 0.1A Vds= 12. ...

Page 4

... V (V) DS Figure 5 – Typical IV Characteristics Vds, Drain to Source Voltage (V) Output Capacitance Input Capacitance Figure 6 – Typical CV Characteristics. Website: http://www.semelab.co.uk D2219UK 10.00 12.00 14.00 16. Reverse Transfer Capacitance Document Number 6946 Vg=16 V Vg=14 V Vg=12 V Vg=10 V Vg=8V Vg=6 V Issue 1 ...

Page 5

... Gate-Bias 30pF T1 1-16pF D2219UK 1GHz TEST FIXTURE Substrate 0.8mm PTFE/glass, Er=2.5 All microstrip lines W=2.2mm T1 3mm T2 30mm T3 12mm T4 9mm T5 5mm 15mm L1 7.5 turns 24swg enamelled copper wire, 3mm i.d. L2 1.5 turns 24swg enamelled copper wire on ferrite core Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press ...

Related keywords