SKIM459GD12E4 SEMIKRON, SKIM459GD12E4 Datasheet
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Manufacturer Part Number
SKIM459GD12E4
Specifications of SKIM459GD12E4
Dc Collector Current
554A
Collector Emitter Voltage Vces
1.2kV
Collector Emitter Voltage V(br)ceo
800mV
No. Of Pins
33
Package / Case
SKiM 93
Family/system
SKiM 63\/93
Voltage (v)
1200
Current (a)
450
Chip-type
IGBT 4 (Trench)
Case
SKIM 93
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
SKIM459GD12E4
Part Number:
SKIM459GD12E4
Part Number:
SKIM459GD12E4
SKiM459GD12E4
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V
• Low inductance case
• Isolated by Al
• Pressure contact technology
• High short circuit capability, self
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
© by SEMIKRON
SKiM
coefficient
Bonded) ceramic substrate
forthermal contacts and
electricalcontacts
limiting to 6 x I
CE(sat)
with positive temperature
®
93
2
O
C
GD
3
DCB (Direct Copper
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-s)
G
Rev. 2 – 26.08.2009
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
di/dt
di/dt
Conditions
I
I
AC sinus 50 Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 175 °C
= 175 °C
= 450 A
= 25 °C
= 450 A
=V
= 1200 V
= 25 V
on
off
= 800 V
≤ 15 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 600 V
= 3xI
= 3xI
≤ 1200 V
= 1.3 Ω
= 1.3 Ω
= 8340 A/µs
= 3660 A/µs
CE
, I
Fnom
Cnom
C
= 18 mA
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
s
s
j
s
s
j
j
j
j
j
j
j
j
j
j
j
j
j
= 150 °C
j
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 25 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 150 °C
= 25 °C
= 70 °C
= 25 °C
= 70 °C
= 25 °C
min.
5
-40 ... 175
-40 ... 175
-40 ... 125
-20 ... 20
Values
1200
1350
1350
2430
2500
2550
typ.
1.85
2.25
26.4
1.74
1.41
554
450
450
438
347
450
700
276
538
114
0.8
0.7
2.3
3.4
5.8
0.1
1.7
10
55
22
57
0.092
max.
2.10
2.45
0.9
0.8
2.7
3.7
6.5
0.3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
Related parts for SKIM459GD12E4
SKIM459GD12E4 Summary of contents
... SKiM459GD12E4 ® SKiM 93 Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology forthermal contacts and electricalcontacts • ...
... SKiM459GD12E4 ® SKiM 93 Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology forthermal contacts and electricalcontacts • ...
... SKiM459GD12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 26.08.2009 = ...
... SKiM459GD12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 26.08.2009 ...
... SKiM459GD12E4 SKIM® This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 26.08.2009 5 ...
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