IGBT Module

SKIM459GD12E4

Manufacturer Part NumberSKIM459GD12E4
DescriptionIGBT Module
ManufacturerSEMIKRON
SKIM459GD12E4 datasheet
 

Specifications of SKIM459GD12E4

Dc Collector Current554ACollector Emitter Voltage Vces1.2kV
Collector Emitter Voltage V(br)ceo800mVNo. Of Pins33
Package / CaseSKiM 93Family/systemSKiM 63\/93
Voltage (v)1200Current (a)450
Chip-typeIGBT 4 (Trench)CaseSKIM 93
Lead Free Status / RoHS StatusLead free / RoHS Compliant  
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SKiM459GD12E4
®
SKiM
93
Trench IGBT Modules
SKiM459GD12E4
Features
• IGBT 4 Trench Gate Technology
• Solderless sinter technology
• V
with positive temperature
CE(sat)
coefficient
• Low inductance case
• Isolated by Al
O
DCB (Direct Copper
2
3
Bonded) ceramic substrate
• Pressure contact technology
forthermal contacts and
electricalcontacts
• High short circuit capability, self
limiting to 6 x I
C
• Integrated temperature sensor
Typical Applications
• Automotive inverter
• High reliability AC inverter wind
• High reliability AC inverter drives
GD
© by SEMIKRON
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
CES
I
T
= 25 °C
s
C
T
= 175 °C
j
T
= 70 °C
s
I
Cnom
I
I
= 3xI
CRM
CRM
Cnom
V
GES
V
= 800 V
CC
≤ 15 V
t
V
T
= 150 °C
psc
GE
j
≤ 1200 V
V
CES
T
j
Inverse diode
T
= 25 °C
I
s
F
T
= 175 °C
j
T
= 70 °C
s
I
Fnom
I
I
= 3xI
FRM
FRM
Fnom
t
= 10 ms, sin 180°, T
= 25 °C
I
FSM
p
j
T
j
Module
I
t(RMS)
T
stg
V
AC sinus 50 Hz, t = 1 min
isol
Characteristics
Symbol
Conditions
IGBT
I
= 450 A
V
T
= 25 °C
C
j
CE(sat)
V
= 15 V
GE
T
= 150 °C
j
chiplevel
T
= 25 °C
V
CE0
j
T
= 150 °C
j
r
T
= 25 °C
CE
j
V
= 15 V
GE
T
= 150 °C
j
V
V
=V
, I
= 18 mA
GE(th)
GE
CE
C
T
= 25 °C
I
V
= 0 V
CES
j
GE
V
= 1200 V
CE
f = 1 MHz
C
ies
V
= 25 V
CE
C
f = 1 MHz
oes
V
= 0 V
GE
f = 1 MHz
C
res
Q
V
= - 8 V...+ 15 V
GE
G
R
T
= 25 °C
Gint
j
T
= 150 °C
t
d(on)
j
V
= 600 V
CC
t
T
= 150 °C
I
= 450 A
j
r
C
T
= 150 °C
E
= 1.3 Ω
R
on
j
G on
= 1.3 Ω
R
t
T
= 150 °C
G off
j
d(off)
di/dt
= 8340 A/µs
on
T
= 150 °C
t
f
j
di/dt
= 3660 A/µs
off
E
T
= 150 °C
j
off
R
per IGBT
th(j-s)
Rev. 2 – 26.08.2009
Values
Unit
1200
V
554
A
450
A
450
A
1350
A
-20 ... 20
V
10
µs
-40 ... 175
°C
438
A
347
A
450
A
1350
A
2430
A
-40 ... 175
°C
700
A
-40 ... 125
°C
2500
V
min.
typ.
max.
Unit
1.85
2.10
V
2.25
2.45
V
0.8
0.9
V
0.7
0.8
V
2.3
2.7
mΩ
3.4
3.7
mΩ
5
5.8
6.5
V
0.1
0.3
mA
mA
26.4
nF
1.74
nF
1.41
nF
2550
nC
1.7
276
ns
55
ns
22
mJ
538
ns
114
ns
57
mJ
0.092
K/W
1

SKIM459GD12E4 Summary of contents

  • Page 1

    ... SKiM459GD12E4 ® SKiM 93 Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology forthermal contacts and electricalcontacts • ...

  • Page 2

    ... SKiM459GD12E4 ® SKiM 93 Trench IGBT Modules SKiM459GD12E4 Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology forthermal contacts and electricalcontacts • ...

  • Page 3

    ... SKiM459GD12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 26.08.2009 = ...

  • Page 4

    ... SKiM459GD12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 26.08.2009 ...

  • Page 5

    ... SKiM459GD12E4 SKIM® This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 26.08.2009 5 ...