SKIM609GAL12E4 SEMIKRON, SKIM609GAL12E4 Datasheet
SKIM609GAL12E4
Specifications of SKIM609GAL12E4
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SKIM609GAL12E4 Summary of contents
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... SKiM609GAL12E4 ® SKiM 93 Trench IGBT Modules SKiM609GAL12E4 Target Data Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology ...
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... SKiM609GAL12E4 ® SKiM 93 Trench IGBT Modules SKiM609GAL12E4 Target Data Features • IGBT 4 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology ...
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... SKiM609GAL12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 26.08.2009 = ...
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... SKiM609GAL12E4 Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 26.08.2009 ...
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... SKiM609GAL12E4 SKIM® 93 GAL This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 26.08.2009 5 ...