SKIM909GD066HD SEMIKRON, SKIM909GD066HD Datasheet
SKIM909GD066HD
Specifications of SKIM909GD066HD
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SKIM909GD066HD Summary of contents
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... SKiM909GD066HD ® SKiM 93 Trench IGBT Modules SKiM909GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for ...
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... SKiM909GD066HD ® SKiM 93 Trench IGBT Modules SKiM909GD066HD Features • IGBT 3 Trench Gate Technology • Solderless sinter technology • V with positive temperature CE(sat) coefficient • Low inductance case • Isolated DCB (Direct Copper 2 3 Bonded) ceramic substrate • Pressure contact technology for ...
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... SKiM909GD066HD Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 2 – 05.10.2009 = ...
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... SKiM909GD066HD Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 2 – 05.10.2009 ...
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... SKiM909GD066HD SKIM® This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. © by SEMIKRON Rev. 2 – 05.10.2009 5 ...