2MBI200S-120-50 FUJI ELECTRIC, 2MBI200S-120-50 Datasheet

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2MBI200S-120-50

Manufacturer Part Number
2MBI200S-120-50
Description
DUAL IGBT MODULE 200A 1200V NPT
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 2MBI200S-120-50

Module Configuration
Dual
Transistor Polarity
N Channel
Dc Collector Current
300A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
1.5kW
Collector Emitter Voltage V(br)ceo
1.2kV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
■ ■ ■ ■ Maximum Ratings and Characteristics
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage
*
Screw Torque
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
Thermal Resistance
IGBT MODULE ( S-Series )
■ ■ ■ ■ Features
• NPT-Technology
• Square SC SOA at 10 x I
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
• Low Losses And Soft Switching
■ ■ ■ ■ Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
1
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Switching Loss
Note: 1*: All Terminals should be connected together when isolation test will be done.
2*: Recommendable Value; Mounting 2.5 ∼ 3.5 Nm (M5 or M6), Terminal 3.5~4.5 (M6)
Items
Items
Continuous
1ms
Continuous
1ms
Items
A.C. 1min.
25°C / 80°C
25°C / 80°C
C
( at T
2MBI 200S-120
( T
Symbols
Symbols
j
=25°C )
I
I
V
V
C
C
C
t
t
t
t
t
V
t
c
R
R
R
CES
GES
ON
r,x
r,i
OFF
f
rr
=25°C
GE(th)
CE(sat)
F
ies
oes
res
th(c-f)
th(j-c)
th(j-c)
Terminals *
Mounting *
Symbols
-I
-I
)
P
T
V
V
I
I
T
V
C
C PULSE
C
C PULSE
j
stg
CES
GES
C
is
V
V
V
V
V
V
f=1MHz
V
I
V
R
Inductive Load
I
I
C
F
F
IGBT
Diode
With Thermal Compound
GE
CE
GE
GE
GE
CE
CC
GE
G
=200A; V
=200A
2
2
=0V V
=10V
=0V V
=20V I
=15V I
=0V
= 600V
= 200A
= ±15V
= 4.7Ω
-40 ∼ +125
300 / 200
600 / 400
Ratings
1200
1500
+150
2500
CE
GE
± 20
C
C
200
400
GE
3.5
4.5
Test Conditions
=200mA
=200A
Test Conditions
=1200V
=± 20V
=0V
Units
■ ■ ■ ■ Outline Drawing
Nm
°C
W
V
A
V
T
T
T
T
j
j
j
j
= 25°C
=125°C
= 25°C
=125°C
■ ■ ■ ■ Equivalent Circuit
Min.
Min.
5.5
24’000
0.025
Typ.
5’000
4’400
0.35
0.25
0.10
0.45
0.08
Typ.
7.2
2.3
2.8
2.3
2.0
MS5F 4898 rev. B 2001-02-21
2-Pack IGBT
0.085
0.180
Max.
Max.
400
350
1.0
8.5
2.6
1.2
0.6
1.0
0.3
3.0
2x200A
1200V
Units
Units
°C/W
mA
nA
pF
µs
ns
V
V

Related parts for 2MBI200S-120-50

2MBI200S-120-50 Summary of contents

Page 1

IGBT MODULE ( S-Series ) ■ ■ ■ ■ Features • NPT-Technology • Square SC SOA • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low Losses ...

Page 2

IGBT 1200V 2x200A ...

Page 3

IGBT 1200V 2x200A ...

Page 4

IGBT 1200V 2x200A ...

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