2MBI400U2B-060-50 FUJI ELECTRIC, 2MBI400U2B-060-50 Datasheet
2MBI400U2B-060-50
Specifications of 2MBI400U2B-060-50
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2MBI400U2B-060-50 Summary of contents
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... SPECIFICATION Device Name : Type Name : Spec. No. : K.Muramatsu Apr. 21 ’06 T.Miyasaka M.W atanabe Apr. 21 ’06 K.Yamada IGBT module (RoHS compliant product) 2MBI400U2B-060-50 MS5F6562 MS5F6562 H04-004-07b ...
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Classi- Date Ind. fication Enactment Apr.-21 -’06 Revised Reliability test a Aug.-09 -’06 Revision Applied Content Drawn date Issued date K.Muramatsu results (P9/14) MS5F6562 Checked Checked ...
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... Outline Drawing ( Unit : Equivalent circuit (RoHS compliant product) 3 MS5F6562 14 H04-004-03a a ...
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Maximum Ratings ( at Tc= 25℃ unless otherwise specified ） Items Collector-Emitter voltage Gate-Emitter voltage Collector current Collector Power Dissipation Junction temperature Storage temperature Isolation between terminal and copper base * voltage Screw Torque (* ) All terminals should ...
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... Lot.No. 7.Applicable category This specification is applied to IGBT Module named 2MBI400U2B-060-50 . 8.Storage and transportation notes ・ The module should be stored at a standard temperature 35℃ and humidity 75% . ・ Store modules in a place with few temperature changes in order to avoid condensation on the module surface. ...
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... The document (MS5F6209) about RoHS that Fuji Electric Device Technology issued is applied to this IGBT Module. The Japanese Edition(MS5F6212) is made into a reference grade. ...
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Reliability test results Test cate- Test items gories 1 Terminal Strength Pull force (Pull test) Test time 2 Mounting Strength Screw torque Test time 3 Vibration Range of frequency : 10 ~ 500Hz Sweeping time Acceleration Sweeping direction : ...
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Test cate- Test items gories 1 High temperature Reverse Bias Test temp. Bias Voltage Bias Method Test duration 2 High temperature Bias (for gate) Test temp. Bias Voltage Bias Method Test duration 3 Temperature Humidity Bias Test temp. Relative humidity ...
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Reliability Test Results Test cate- Test items gories 1 Terminal Strength (Pull test) 2 Mounting Strength 3 Vibration 4 Shock 1 High Temperature Storage 2 Low Temperature Storage 3 Temperature Humidity Storage 4 Unsaturated Pressurized Vapor 5 Temperature Cycle 6 ...
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Collector current vs. Collector-Emitter voltage (typ.) Tj= 25℃ / chip 1000 VGE=20V15V 12V 800 600 400 200 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1000 Tj=25℃ 800 600 ...
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Switching time vs. Collector current (typ.) Vcc=300V, VGE=±15V, Rg=6.8Ω, Tj= 25℃ 10000 toff 1000 ton 100 10 0 200 400 600 Collector current : Switching time vs. Gate resistance (typ.) Vcc=300V, Ic=400A, VGE=±15V, Tj= 25℃ 10000 ...
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Forward current vs. Forward on voltage (typ.) chip 1000 800 Tj=25℃ 600 400 200 0 0.0 1.0 2.0 Forward on voltage : Transient thermal resistance (max.) 1.000 0.100 0.010 0.001 0.001 0.010 0.100 Pulse width : ...
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This product shall be used within its absolute maximum rating (voltage, current, and temperature). This product may be broken in case of using beyond the ratings. 製品の絶対最大定格（電圧，電流，温度等）の範囲内で御使用下さい。絶対最大定格を超えて使用すると、素子が破壊する 場合があります。 - Connect adequate fuse or protector of circuit between three-phase line and ...
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... The application examples described in this specification only explain typical ones that used the Fuji Electric Device Technology products. This specification never ensure to enforce the industrial property and other rights, nor license the enforcement rights. 本 ...