6MBI100S-120-50 FUJI ELECTRIC, 6MBI100S-120-50 Datasheet
6MBI100S-120-50
Manufacturer Part Number
6MBI100S-120-50
Description
6-PACK IGBT MODULE 100A 1200V NPT
Manufacturer
FUJI ELECTRIC
Datasheet
1.6MBI100S-120-50.pdf
(4 pages)
Specifications of 6MBI100S-120-50
Module Configuration
Six
Transistor Polarity
N Channel
Dc Collector Current
150A
Collector Emitter Voltage Vces
2.6V
Power Dissipation Max
700W
Collector Emitter Voltage V(br)ceo
1.2kV
Power Dissipation Pd
700W
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
I I Maximum Ratings and Characteristics
•
Collector-Emitter Voltage
Gate -Emitter Voltage
Collector
Current
Max. Power Dissipation
Operating Temperature
Storage Temperature
Isolation Voltage A.C. 1min.
Screw Torque
•
Zero Gate Voltage Collector Current
Gate-Emitter Leackage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Time
Turn-off Time
Diode Forward On-Voltage
Reverse Recovery Time
•
Thermal Resistance
IGBT MODULE ( S-Series )
I I Features
• NPT-Technology
• Solderable Package
• Square SC SOA at 10 x I
• High Short Circuit Withstand-Capability
• Small Temperature Dependence of the Turn-Off
• Low Losses And Soft Switching
I I Applications
• High Power Switching
• A.C. Motor Controls
• D.C. Motor Controls
• Uninterruptible Power Supply
Absolute Maximum Ratings
Electrical Characteristics
Thermal Characteristics
Switching Loss
Items
Items
Continuous 25°C / 80°C
1ms
Continuous
1ms
Items
25°C / 80°C
C
( at T
6MBI 100S-120
( T
Symbols
Symbols
j
=25°C )
I
I
V
V
C
C
C
t
t
t
t
t
V
t
c
R
R
R
CES
GES
ON
r,x
r,i
OFF
f
rr
=25°C
CE(sat)
F
GE(th)
ies
oes
res
th(c-f)
th(j-c)
th(j-c)
Mounting*
Symbols
-I
-I
)
V
V
I
I
P
T
T
V
C
C PULSE
C
C PULSE
j
stg
CES
GES
C
is
Note: *:Recommendable Value; 2.5 ∼ 3.5 Nm (M5)
IGBT
Diode
With Thermal Compound
V
V
V
V
V
V
V
f=1MHz
V
I
V
R
Inductive Load
I
I
I
C
F
F
F
GE
CE
GE
GE
GE
GE
CE
CC
GE
G
=100A; V
=100A; V
=100A
=100A
=12Ω
=0V V
=10V
=0V V
=20V I
=15V I
=15V I
=0V
=600V
=± 15V
-40 ∼ +125
150 / 100
300 / 200
Ratings
1200
+150
2500
± 20
100
200
700
3.5
Test Conditions
Test Conditions
CE
GE
C
C
C
GE
GE
=100mA
=100A; T
=100A; T
=1200V
=± 20V
=0V; T
=0V; T
I I Outline Drawing
Units
j
j
Nm
°C
j
j
= 25°C
=125°C
W
V
A
V
= 25°C
=125°C
I I Equivalent Circuit
Min.
Min.
5.5
12000
Typ.
0.35
0.25
0.10
0.45
0.08
Typ.
0.05
2500
2200
7.2
2.3
2.8
2.5
2.0
6-Pack IGBT
6x100A
0.18
0.36
1200V
Max.
Max.
200
350
1.0
8.5
2.6
1.2
0.6
1.0
0.3
3.3
Units
Units
°C/W
mA
nA
pF
µs
ns
V
V
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6MBI100S-120-50 Summary of contents
Page 1
IGBT MODULE ( S-Series ) I I Features • NPT-Technology • Solderable Package • Square SC SOA • High Short Circuit Withstand-Capability • Small Temperature Dependence of the Turn-Off Switching Loss • Low ...
Page 2
IGBT 1200V 6x100A ...
Page 3
IGBT 1200V 6x100A ...
Page 4
IGBT 1200V 6x100A ...