SKM400GB12E4 SEMIKRON, SKM400GB12E4 Datasheet

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... SKM400GB12E4 SEMITRANS ® 3 IGBT4 Modules SKM400GB12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • V with positive temperature CEsat coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • ...

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... SKM400GB12E4 SEMITRANS ® 3 IGBT4 Modules SKM400GB12E4 Features • IGBT4 = 4. Generation (Trench)IGBT • V with positive temperature CEsat coefficient • High short circuit capability, self limiting CNOM • Soft switching 4. Generation CAL diode (CAL4) • UL recognized, file no. E63532 Typical Applications* • AC inverter drives • ...

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... SKM400GB12E4 Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 3 – 29.10.2010 = ...

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... SKM400GB12E4 Fig. 7: Typ. switching times vs Fig. 9: Transient thermal impedance Fig. 11: CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode peak reverse recovery charge Rev. 3 – 29.10.2010 G CC'+EE' ...

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... SKM400GB12E4 SEMITRANS 3 GB This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...