SEMIX 653GD176HDC SEMIKRON, SEMIX 653GD176HDC Datasheet

IGBT MODULE, 1.7KV, 620A, SEMIX 33C

SEMIX 653GD176HDC

Manufacturer Part Number
SEMIX 653GD176HDC
Description
IGBT MODULE, 1.7KV, 620A, SEMIX 33C
Manufacturer
SEMIKRON
Datasheet

Specifications of SEMIX 653GD176HDC

Transistor Polarity
N Channel
Dc Collector Current
660A
Collector Emitter Voltage Vces
2.45V
Collector Emitter Voltage V(br)ceo
1.7kV
Continuous Collector Current Ic
650A
Thermal Resistance
0.048°C/W
Rohs Compliant
Yes
Collector Emitter Saturation Voltage Vce(sat)
2V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
SEMiX653GD176HDc
Trench IGBT Modules
SEMiX653GD176HDc
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
© by SEMIKRON
SEMiX
coefficient
CE(sat)
with positive temperature
®
33c
GD
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 1 – 24.06.2010
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 150 °C
= 150 °C
= 450 A
= 25 °C
= 450 A
=V
= 1700 V
= 25 V
= 1000 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 1200 V
= 2xI
= 2xI
≤ 1700 V
= 3.6 Ω
= 3.6 Ω
CE
, I
Fnom
Cnom
C
= 18 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5.2
-55 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1700
2900
4000
4200
typ.
2.45
39.6
1.65
1.31
1.67
619
438
450
900
545
365
450
900
600
290
300
975
190
180
0.9
2.2
3.4
5.8
10
90
2
1
0.054
max.
2.45
2.9
1.2
1.1
2.8
4.0
6.4
3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1

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SEMIX 653GD176HDC Summary of contents

Page 1

... Trench IGBT Modules SEMiX653GD176HDc Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GD © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT V CES ° 150 ° ° ...

Page 2

... SEMIKRON Unit mΩ mΩ A µC mJ K/W nH mΩ mΩ K Ω K ...

Page 3

... SEMiX653GD176HDc Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 24.06.2010 = ...

Page 4

... Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 24.06.2010 G CC'+EE' © by SEMIKRON ...

Page 5

... The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. ...

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