SEMiX252GB176HDs
SEMiX
®
2s
Trench IGBT Modules
SEMiX252GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
with positive temperature
CE(sat)
coefficient
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
GB
© by SEMIKRON
Absolute Maximum Ratings
Symbol
Conditions
IGBT
V
T
= 25 °C
j
CES
T
= 25 °C
I
C
c
T
= 150 °C
j
T
= 80 °C
c
I
Cnom
I
I
= 2xI
CRM
CRM
Cnom
V
GES
V
= 1000 V
CC
V
≤ 20 V
T
= 125 °C
t
psc
GE
j
V
≤ 1700 V
CES
T
j
Inverse diode
I
T
= 25 °C
F
c
T
= 150 °C
j
T
= 80 °C
c
I
Fnom
I
I
= 2xI
FRM
FRM
Fnom
I
t
= 10 ms, sin 180°, T
= 25 °C
p
j
FSM
T
j
Module
T
= 80 °C
I
terminal
t(RMS)
T
stg
V
AC sinus 50Hz, t = 1 min
isol
Characteristics
Symbol
Conditions
IGBT
I
= 150 A
T
= 25 °C
V
C
CE(sat)
j
V
= 15 V
GE
T
= 125 °C
chiplevel
j
V
T
= 25 °C
j
CE0
T
= 125 °C
j
T
= 25 °C
r
j
CE
V
= 15 V
GE
T
= 125 °C
j
V
V
=V
, I
= 6 mA
GE(th)
GE
CE
C
I
T
= 25 °C
V
= 0 V
j
CES
GE
V
= 1700 V
T
= 125 °C
CE
j
C
f = 1 MHz
ies
V
= 25 V
CE
f = 1 MHz
C
oes
V
= 0 V
GE
C
f = 1 MHz
res
Q
V
= - 8 V...+ 15 V
G
GE
T
= 25 °C
R
j
Gint
V
= 1200 V
t
T
= 125 °C
CC
d(on)
j
I
= 150 A
T
= 125 °C
t
C
r
j
V
= ±15 V
GE
E
T
= 125 °C
R
= 9
j
on
G on
T
= 125 °C
t
R
= 9
d(off)
j
G off
t
T
= 125 °C
j
f
E
T
= 125 °C
off
j
R
per IGBT
th(j-c)
Rev. 3 – 13.01.2012
Values
Unit
1700
V
246
A
175
A
150
A
300
A
-20 ... 20
V
10
µs
-55 ... 150
°C
288
A
195
A
150
A
300
A
1200
A
-40 ... 150
°C
600
A
-40 ... 125
°C
4000
V
min.
typ.
max.
Unit
2
2.45
V
2.4
2.9
V
1
1.2
V
0.9
1.1
V
6.7
8.3
m
10.3
12.0
m
5.2
5.8
6.4
V
3
mA
mA
13.3
nF
0.55
nF
0.44
nF
1400
nC
4.25
265
ns
55
ns
90
mJ
875
ns
125
ns
55
mJ
0.12
K/W
1