SEMIX453GB176HDS SEMIKRON, SEMIX453GB176HDS Datasheet
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Manufacturer Part Number
SEMIX453GB176HDS
Description
IGBT MODULE, 1.7KV, 444A, SEMIX 3S
Specifications of SEMIX453GB176HDS
Dc Collector Current
444A
Collector Emitter Voltage Vces
1.7kV
Collector Emitter Voltage V(br)ceo
1.7kV
Operating Temperature Range
-55°C To +150°C
No. Of Pins
7
Family/system
SEMiX
Voltage (v)
1700
Current (a)
300
Chip-type
IGBT 3 (Trench)
Case
SEMiX 3s
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Part Number:
SEMIX453GB176HDS
SEMiX453GB176HDs
Trench IGBT Modules
SEMiX453GB176HDs
Features
• Homogeneous Si
• Trench = Trenchgate technology
• V
• UL recognised file no. E63532
Typical Applications*
• AC inverter drives
• UPS
• Electronic welders
© by SEMIKRON
SEMiX
coefficient
CE(sat)
with positive temperature
®
3s
GB
Absolute Maximum Ratings
Symbol
IGBT
V
I
I
I
V
t
T
Inverse diode
I
I
I
I
T
Module
I
T
V
Characteristics
Symbol
IGBT
V
V
r
V
I
C
C
C
Q
R
t
t
E
t
t
E
R
C
Cnom
CRM
psc
F
Fnom
FRM
FSM
t(RMS)
CE
CES
d(on)
r
d(off)
f
j
j
stg
CES
GES
isol
CE(sat)
CE0
GE(th)
on
off
ies
oes
res
Gint
th(j-c)
G
Rev. 1 – 24.06.2010
T
V
V
V
T
t
I
V
chiplevel
V
V
V
V
V
V
T
V
I
R
R
Conditions
I
I
AC sinus 50Hz, t = 1 min
Conditions
V
per IGBT
p
C
C
CRM
FRM
j
j
j
CC
GE
CES
GE
GE
GE
CE
CE
GE
GE
CC
GE
G on
G off
= 10 ms, sin 180°, T
= 150 °C
= 150 °C
= 300 A
= 25 °C
= 300 A
=V
= 1700 V
= 25 V
= 1000 V
≤ 20 V
= 15 V
= 15 V
= 0 V
= 0 V
= - 8 V...+ 15 V
= 1200 V
= 2xI
= 2xI
≤ 1700 V
= 4.3 Ω
= 4.3 Ω
CE
, I
Fnom
Cnom
C
= 12 mA
T
T
T
T
T
T
T
T
T
T
T
T
T
f = 1 MHz
f = 1 MHz
f = 1 MHz
T
T
T
T
T
T
c
c
j
c
c
j
j
j
j
j
j
j
j
j
j
j
j
j
j
= 125 °C
j
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 25 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 125 °C
= 25 °C
= 80 °C
= 25 °C
= 80 °C
= 25 °C
min.
5.2
-55 ... 150
-40 ... 150
-40 ... 125
-20 ... 20
Values
1700
2900
4000
2799
typ.
2.45
26.4
1.10
0.88
2.50
444
315
300
600
545
365
300
600
600
335
215
990
150
125
0.9
3.3
5.2
5.8
10
70
2
1
0.071
max.
2.45
2.9
1.2
1.1
4.2
6.0
6.4
3
Unit
Unit
K/W
mΩ
mΩ
mA
mA
nC
mJ
mJ
°C
°C
°C
nF
nF
nF
µs
ns
ns
ns
ns
Ω
V
A
A
A
A
V
A
A
A
A
A
A
V
V
V
V
V
V
1
Related parts for SEMIX453GB176HDS
SEMIX453GB176HDS Summary of contents
... SEMiX453GB176HDs ® SEMiX 3s Trench IGBT Modules SEMiX453GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GB © by SEMIKRON Absolute Maximum Ratings Symbol Conditions ...
... SEMiX453GB176HDs ® SEMiX 3s Trench IGBT Modules SEMiX453GB176HDs Features • Homogeneous Si • Trench = Trenchgate technology • V with positive temperature CE(sat) coefficient • UL recognised file no. E63532 Typical Applications* • AC inverter drives • UPS • Electronic welders GB 2 Characteristics Symbol Conditions Inverse diode I = 300 ° ...
... SEMiX453GB176HDs Fig. 1: Typ. output characteristic, inclusive R Fig. 3: Typ. turn-on /-off energy = f (I Fig. 5: Typ. transfer characteristic © by SEMIKRON Fig. 2: Rated current vs. temperature I CC'+ EE' ) Fig. 4: Typ. turn-on /-off energy = Fig. 6: Typ. gate charge characteristic Rev. 1 – 24.06.2010 = ...
... SEMiX453GB176HDs Fig. 7: Typ. switching times vs. I Fig. 9: Typ. transient thermal impedance Fig. 11: Typ. CAL diode peak reverse recovery current 4 Fig. 8: Typ. switching times vs. gate resistor R C Fig. 10: Typ. CAL diode forward charact., incl. R Fig. 12: Typ. CAL diode recovery charge Rev. 1 – 24.06.2010 ...
... SEMiX453GB176HDs SEMiX 3s spring configuration This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. © ...
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