GA100XCP12-227 GeneSiC Semiconductor, GA100XCP12-227 Datasheet
GA100XCP12-227
Specifications of GA100XCP12-227
Related parts for GA100XCP12-227
GA100XCP12-227 Summary of contents
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... Hz SOL ISOL I T 105 º º ms, half sine ºC F, IGBT thJC R SiC diode thJC M d Preliminary Datasheet http://www.genesicsemi.com GA100XCP12-227 V = 1200 V CES I = 100 2.0 V CE(SAT Values Unit 1200 V 100 A ± -40 to +150 ºC -40 to +150 ºC 3000 V 100 A ...
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... E off 100 ºC D(TO rrm 100 -dI /dt = 625 / Figure 2: Typical Output Characteristics at 150 Preliminary Datasheet http://www.genesicsemi.com GA100XCP12-227 Values min. typ ºC 5 ºC CES 150 ºC 0 º º 150 ºC 25 ºC(150 ºC) 2.0(2.1) j tbd tbd tbd = 15V 400 GE 5 tbd ...
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... Figure 3: Typical Transfer Characteristics Figure 5: Typical FWD Forward Characteristics Figure 7: Typical Turn On Energy Losses and Switching Times January 2011 Figure 4: Typical Blocking Characteristics Figure 6: Typical Turn On Gate Charge Figure 8: Typical Turn Off Energy Losses and Switching Times Preliminary Datasheet http://www.genesicsemi.com GA100XCP12-227 Page ...
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... Figure 9: Typical Reverse Recovery Currents and Times Package Dimensions: SOT-227 NOTE 1. CONTROLLED DIMENSION IS INCH. DIMENSION IN BRACKET IS MILLIMETER. 2. DIMENSIONS DO NOT INCLUDE END FLASH, MOLD FLASH, MATERIAL PROTRUSIONS January 2011 PACKAGE OUTLINE Preliminary Datasheet http://www.genesicsemi.com GA100XCP12-227 Page ...
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... Unless otherwise expressly indicated, GeneSiC products are not designed, tested or authorized for use in life-saving, medical, aircraft navigation, communication, air traffic control and weapons systems, nor in applications where their failure may result in death, personal injury and/or property damage. January 2011 Revision History Revision Comments 1 First generation release Preliminary Datasheet http://www.genesicsemi.com GA100XCP12-227 Supersedes Page ...