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IXA12IF1200PB
IXA12IF1200PB | |
|---|---|
| Manufacturer Part Number | IXA12IF1200PB |
| Description | IGBT,1200V,20A,TO-220 |
| Manufacturer | IXYS SEMICONDUCTOR |
| IXA12IF1200PB datasheets |
|
Availability: By request
International delivery:
Warranty: 60 days
×
- We provide standard 60-days warranty for all parts. If warranty differs we always mention it beforehand. In case of return we cover shipping costs.
- If you still have any questions - please contact us
×
Shipping terms
- Standard delivery time differs from 5-8 business days if the supplier is a local one to 12-14 days if the suplier is from overseas. If delivery time differs it's always mentioned in our quotation.
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Payment terms
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- If you still have any questions - please contact us
Specifications of IXA12IF1200PB | |||
|---|---|---|---|
| Transistor Type | IGBT | Dc Collector Current | 20A |
| Collector Emitter Voltage Vces | 2.1V | Power Dissipation Max | 85W |
| Collector Emitter Voltage V(br)ceo | 1.2kV | Operating Temperature Range | -55°C To +150°C |
| Transistor | RoHS Compliant | Transistor Case Style | TO-220 |
| Rohs Compliant | Yes | Power Dissipation Pd | 85W |
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PrevNext
XPT IGBT
Copack
Part number
IXA12IF1200HB
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
IGBT
Symbol
Definition
V
Collector emitter voltage
CES
V
Maximum DC gate voltage
GES
I
Collector current
C25
I
C
100
P
Total power dissipation
tot
I
Collector emitter leakage current
CES
I
Gate emitter leakage current
GES
V
Collector emitter saturation voltage
CE(sat)
V
Gate emitter threshold voltage
GE(th)
Total gate charge
Gon
t
Turn-on delay time
d(on)
t
Current rise time
r
t
Turn-off delay time
d(off)
t
Current fall time
f
E
Turn-on energy per pulse
on
E
Turn-off energy per pulse
off
RBSOA
Reverse bias safe operation area
SCSOA
Short circuit safe operation area
t
Short circuit duration
SC
I
Short circuit current
SC
R
Thermal resistance juntion to case
thJC
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
C (2)
(G) 1
E (3)
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
Conditions
V
= 0 V
T
GE
VJ
T
VJ
T
C
T
C
T
VJ
V = V
; V = 0 V
T
CE
CES
GE
VJ
T
VJ
V
= 0 V; V = ±20 V
CE
GE
9
15
I =
A; V =
V
T
GE
C
VJ
T
VJ
I =
0.3
mA; V
= V
C
GE
CE
V
=
600
V; V
=
15
V; I =
10
A
CE
GE
C
Inductive load
V
=
600
V; I =
10
A
CE
C
Ω
T
V
= ±15 V; R =
100
GE
VJ
G
Ω
V
=
15
V;
R =
100
T
VJ
GE
G
V
=
1200
V
CEK
V
=
900
V; V = ±15 V
T
CE
VJ
GE
Ω
R =
100
; non-repetitive
G
Data according to IEC 60747and per diode unless otherwise specified
IXA12IF1200HB
preliminary
I
=
20
A
C25
V
=
V
1200
CES
V
1.8 V
=
CE(sat)typ
Package:
● Housing: TO-247
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
R a t i n g s
min.
typ.
max.
Unit
= 25°C
1200
= 25°C
±20
= 25°C
20
=
100
°C
13
= 25°C
85
W
= 25°C
0.1
mA
=
125
°C
0.1
mA
500
nA
1.8
2.1
= 25°C
=
125
°C
2.1
5.4
6
6.5
27
nC
70
ns
40
ns
250
ns
100
ns
=
125
°C
1.1
mJ
1.1
mJ
= 125°C
30
= 125°C
10
µs
40
1.5
K/W
20110330a
V
V
A
A
V
V
V
A
A
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IXA12IF1200PB Summary of contents |
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