NTE3322 NTE ELECTRONICS, NTE3322 Datasheet
NTE3322
Manufacturer Part Number
NTE3322
Description
SINGLE IGBT, 900V, 60A
Manufacturer
NTE ELECTRONICS
Datasheet
1.NTE3322.pdf
(2 pages)
Specifications of NTE3322
Dc Collector Current
60A
Collector Emitter Voltage Vces
900V
Power Dissipation Pd
200W
Collector Emitter Voltage V(br)ceo
900V
No. Of Pins
3
Continuous Collector Current Ic
60A
Collector Emitter Saturation Voltage Vce(sat)
24V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Features:
D Enhancemnt Mode Type
D FRD Included Bwetwen Emitter and Collector
D High Speed
D Low Saturation Voltage
Applications:
D High Power Switching
Absolute Maximum Raings: (T
Collector−Emitter Voltage, V
Gate−Emitter Voltage, V
Collector Current, I
Emitter−Collector Foward Current, I
Collector Power Dissipation (T
Operating Junction Temperature, T
Storage Temperature Range, T
Thermal Resistance, Junction−to−Case, R
Screw Torque
Electrical Characteristics: (T
Gate Leakage Current
Collector Cutoff Current
Gate−Emitter Cutoff Voltage
Collector−Emitter Saturation Voltage
DC
Pulse (1ms)
DC
Pulse (1ms)
IGBT
Diode
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GES
Insulated Gate Bipolar Transistor
N−Channel Enhancement Mode,
CES
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
C
stg
A
= +25°C), P
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
A
= +25°C unless otherwise specified)
= +25°C unless otherwise specified)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
J
Symbol
V
V
High Speed Switch
EC
CE(sat)
I
I
GE(off)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
GES
CES
thJC
NTE3322
TO3PBL
V
V
I
I
I
C
C
C
C
GE
CE
= 60mA, V
= 10A, V
= 60A, V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
= 900V, V
= ±25V, V
Test Conditions
GE
GE
CE
GE
CE
= 15V
= 15V
= 5V
= 0
= 0
Min
3.0
−
−
−
−
Typ
1.6
2.1
−
−
−
−55° to +150°C
±500
Max
1.0
6.0
2.2
2.7
0.74°C/W
4.0°C/W
0.8N•m
+150°C
Rev. 9−10
170W
900V
120A
120A
Unit
±25V
mA
nA
V
V
V
60A
15A
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NTE3322 Summary of contents
Page 1
... Electrical Characteristics: (T Parameter Gate Leakage Current Collector Cutoff Current Gate−Emitter Cutoff Voltage Collector−Emitter Saturation Voltage NTE3322 High Speed Switch TO3PBL = +25°C unless otherwise specified CES ...
Page 2
Electrical Characteristics (Cont’d): (T Parameter Input Capacitance Rise Time Turn−On Time Fall Time Turn−Off Time Emitter−Collector Forward Voltage Reverse Recovery Time .137 (3.5) Dia Max .215 (5.45) = +25°C unless otherwise specified) A Symbol Test Conditions 10V, ...